Search for dissertations about: "low temperature MBE"

Showing result 1 - 5 of 15 swedish dissertations containing the words low temperature MBE.

  2. 1. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems

    Author : Henric Åsklund; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; low temperature MBE; GaAs 111 A; InAs; core-level; GaMnAs; photoelectron spectroscopy; MEE; GaAs; InP 110 :As; valence-band; core-exciton; diluted magnetic semiconductor; MBE; interface; III-V semiconductor; surface; InAs 111 A; thin films;

    Abstract : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. READ MORE

  4. 2. Threshold and Temperature Characteristics of InGa(N)As-GaAs Multiple Quantum Well Lasers

    Author : Göran Adolfsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaAs; Semiconductor lasers; molecular beam epitaxy; multiple quantum wells; characteristic temperature; temperature dependence; dilute nitrides; ambipolar diffusion; InGa N As;

    Abstract : Semiconductor lasers emitting in the 1.3 μm regime are of interest for applications in access-networks like fiber-to-the-home and radio-over-fiber systems. Suchfiber optical networks are expected to replace the copper-based access-networks currently in use due to a continuously increasing demand on user bandwidth. READ MORE

  5. 3. Silicon δ-doping and Isoelectronic Doping in GaAs ans GaN Layers Grown by MBE

    Author : Jan Thordson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; MBE; doping; GaN; III-V; delta-doping; heterostructures; GaAs;

    Abstract : This work concerns MBE-grown material, particularly physical effects due to controlled impurities of Si and N in arsenides, and the growth of nitrides and studies of Al- and As-impurities in them. Apart from interesting physical phenomena there are important device applications. The first part is devoted to studies of Si .delta. READ MORE

  6. 4. Dilute Nitride Lasers and Spectrally Engineered Semiconductor Laser Resonators

    Author : Göran Adolfsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; single mode laser; transfer matrix method; threshold current; InGaAs; GaAs; multiple quantum wells; dilute nitrides; two-color laser; GaInNAs; Semiconductor lasers; molecular beam epitaxy; characteristic temperature; temperature dependence; ambipolar diusion; Fabry-Perot resonator; spectral engineering;

    Abstract : The first part of this thesis deals with long wavelength (1.2-1.3 um) InGaAs(N)multiple quantum-well (QW) lasers grown on GaAs, with the aim of understandingand improving their threshold and temperature characteristics. The epitaxialmaterial is grown by molecular beam epitaxy (MBE). READ MORE

  7. 5. Growth of ZnO/GaN distributed Bragg reflectors by plasma-assisted molecular beam epitaxy

    Author : David Adolph; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Oxides; GaN; distributed Bragg reflector; MBE; molecular beam epitaxy; ZnO; Nitrides; DBR;

    Abstract : This thesis describes epitaxial growth of ZnO/GaN distributed Bragg reflectors by hybrid plasma-assisted molecular beam epitaxy on GaN(0001). The unique hybrid approach employed the same growth chamber for continuous growth of both ZnO and GaN without exposing the layers to the ambient conditions. READ MORE