Search for dissertations about: "low-noise amplifier"

Showing result 11 - 15 of 58 swedish dissertations containing the words low-noise amplifier.

  2. 11. Ultra-Low Noise InP HEMTs for Cryogenic Amplification

    Author : Joel Schleeh; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; DC power dissipation; MMIC; LNA; InP HEMT; ALD;

    Abstract : InGaAs/InAlAs/InP High Electron Mobility Transistors (InP HEMTs), are today the best devices to design cryogenic low noise amplifiers. However, reported progress in reducing the noise has been slow in the last decade. READ MORE

  4. 12. Low Noise Amplifiers Based on High TC SQUIDs

    Author : Jakob Blomgren; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : This thesis describes the development, fabrication, performance and applications of liquid nitrogen cooled voltage amplifiers based on high temperature superconducting quantum interference devices (SQUIDs). The SQUID based voltage amplifier is intended for characterization of electrical and noise properties of devices with resistance around and below 1 Ohm. READ MORE

  5. 13. THz Vector Beam Measurement System for APEX Instrument SHeFI and Microwave Cryogenic Low Noise Amplifier Design

    Author : Olle Nyström; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; vector measurements; mm- and submm-wave optics; LNA; radio astronomy; cryogenic amplifier; APEX; InP HEMT; Gaussian beam;

    Abstract : This licentiate thesis describes results of the author’s work on development of THz vector beam measurement system and microwave cryogenic low-noise amplifier.The first part, and the main focus, of the thesis covers the vector beam measurement system for frequency range 210-500 GHz developed to characterize/verify the cold opticsof the APEX instrument SHeFI. READ MORE

  6. 14. Ultra-Wideband Low-Noise Amplifier andSix-Port Transceiver for High Speed DataTransmission

    Author : Adriana Serban; Shaofang Gong; Ke Wu; Linköpings universitet; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP;

    Abstract : Today’s data rates in wired networks can reach 100 Gbit/s using optical fiber while data rates in wireless networks are much lower - tens of Mbit/s for 3G mobile communication and 480 Mbit/s for ultra-wideband (UWB) short range wireless communications. This difference in data rates can mainly be explained by the limited allowed frequency spectrum, the nature of the radio signal and the high requirements imposed on all hardware designed for high speed and wideband wireless communications. READ MORE

  7. 15. InP High Electron Mobility Transistor Design for Cryogenic Low Noise Amplifiers

    Author : Eunjung Cha; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; cryogenic; stability; noise temperature; InP HEMT; LNA; MMIC;

    Abstract : The InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) is the superior technology for the most demanding low-noise and high-speed microwave and millimeter-wave applications, in particular in radio astronomy and deep-space communication. InP HEMT has enabled cryogenic low noise amplifier (LNA) designs with noise temperatures about ten times the quantum noise limit from sub  GHz up to 120 GHz. READ MORE