Search for dissertations about: "low-noise amplifier"

Showing result 6 - 10 of 58 swedish dissertations containing the words low-noise amplifier.

  2. 6. Instrumental and observational studies in radio astronomy : low noise amplifier design and methanol maser research

    Author : Vincent Minier; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; circumstellar matter; HEMT; matching circuitry design; techniques: interferometric; masers; microwave; low noise amplifier; HII regions; stars: formation;

    Abstract : .... READ MORE

  4. 7. Low-Noise Amplifier Design for Ultra-Wideband Systems

    Author : Adriana Serban Craciunescu; Linköpings universitet; []
    Keywords : TECHNOLOGY; TEKNIKVETENSKAP;

    Abstract : The low-noise amplifier (LNA) remains a critical block in every receiver front-end. As the development of the widcband, low-power and low-cost wireless systems continues, new LNA topologies and design methodologies have become one of the most interesting challenges in the field of radio frequency system design. READ MORE

  5. 8. Design and Fabrication of InP High Electron Mobility Transistors for Cryogenic Low-Noise Amplifiers

    Author : Junjie Li; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Channel noise; InP HEMT; cryogenic; subthreshold swing.; noise temperature; spacer thickness; low-noise amplifier;

    Abstract : High electron mobility transistor (InP HEMT) cryogenic low noise amplifiers (LNAs) have made significant improvements in noise and gain following decades of development. Applications are found from radio astronomy to quantum computing. READ MORE

  6. 9. InP High Electron Mobility Transistors for Cryogenic Low-Noise and Low-Power Amplifiers

    Author : Eunjung Cha; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; indium channel content; electrical stability.; dc power dissipation; noise temperature; scaling; low-noise amplifier LNA ; InP high-electron mobility transistor InP HEMT ; cryogenic;

    Abstract : The InAlAs/InGaAs/InP high-electron mobility transistor (InP HEMT) is the preferred low-noise device in cryogenic low-noise amplifiers (LNAs) operating at 5-15 K. Such LNAs are utilized in microwave and millimeter-wave detection in radio astronomy. READ MORE

  7. 10. InP DHBT Amplifiers and Circuit Packaging up to Submillimeter-Wave Frequencies

    Author : Klas Eriksson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; InP; WR05; packaging; noise figure; substrate modes; WR03.; multiple layer interconnect; double heterojunction bipolar transistor DHBT ; G-band; wideband; H-band; waveguide transition; distributed amplifier DA ; millimeter-wave; amplifier; low-noise amplifier LNA ; membrane technology; waveguide module; submillimeter-wave;

    Abstract : This thesis treats the design and characterization of amplifiers operating up tosubmillimeter-wave frequencies and packaging of such circuits into waveguidemodules. The circuits use an advanced indium phosphide (InP) double heterojunctionbipolar transistor (DHBT) process with a multilayer back-end. READ MORE