Search for dissertations about: "mbe"

Showing result 1 - 5 of 40 swedish dissertations containing the word mbe.

  2. 1. Silicon δ-doping and Isoelectronic Doping in GaAs ans GaN Layers Grown by MBE

    Author : Jan Thordson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; MBE; doping; GaN; III-V; delta-doping; heterostructures; GaAs;

    Abstract : This work concerns MBE-grown material, particularly physical effects due to controlled impurities of Si and N in arsenides, and the growth of nitrides and studies of Al- and As-impurities in them. Apart from interesting physical phenomena there are important device applications. The first part is devoted to studies of Si .delta. READ MORE

  4. 2. Photoelectron Spectroscopy Studies of III-V Semiconductor Systems

    Author : Henric Åsklund; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; low temperature MBE; GaAs 111 A; InAs; core-level; GaMnAs; photoelectron spectroscopy; MEE; GaAs; InP 110 :As; valence-band; core-exciton; diluted magnetic semiconductor; MBE; interface; III-V semiconductor; surface; InAs 111 A; thin films;

    Abstract : Photoelectron spectroscopy has been used as a main tool to study a number of III-V semiconductor surfaces. This thesis includes studies of a surface reaction, As/InP(110), thin heteroepitaxial layers, InAs on GaAs(111)A and GaAs on AlAs(100), and a diluted magnetic semiconductor, Ga1-xMnxAs. READ MORE

  5. 3. Detailed photoemission studies of the prototype diluted magnetic semiconductor (Ga,Mn)As

    Author : Intikhab Ulfat; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Electronic structure; Ga; Mn As; Synchrotron radiation; MBE;

    Abstract : Magnetic semiconductors are materials that combine the key features needed in information technology, namely magnetism and controllable charge transport. The prospects of integrating these properties and of using the spin as informa-tion carrier have motivated large efforts to produce such materials for imple-mentation in future spin-based electronics. READ MORE

  6. 4. Growth of ZnO/GaN distributed Bragg reflectors by plasma-assisted molecular beam epitaxy

    Author : David Adolph; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Oxides; GaN; distributed Bragg reflector; MBE; molecular beam epitaxy; ZnO; Nitrides; DBR;

    Abstract : This thesis describes epitaxial growth of ZnO/GaN distributed Bragg reflectors by hybrid plasma-assisted molecular beam epitaxy on GaN(0001). The unique hybrid approach employed the same growth chamber for continuous growth of both ZnO and GaN without exposing the layers to the ambient conditions. READ MORE

  7. 5. Initial growth of GaN on sapphire and growth of AlGaN on GaN by molecular beam epitaxy

    Author : Stefan Davidsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MBE; 2DEG; heterostructure field effect transistor; molecular beam epitaxy; epitexial growth; GaN; III-nitride; AlGaN; two dimensional electron gas; HFET; AlN;

    Abstract : .... READ MORE