Search for dissertations about: "metal semiconductor field-effect transistor"

Showing result 1 - 5 of 34 swedish dissertations containing the words metal semiconductor field-effect transistor.

  1. 1. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

    University dissertation from Uppsala : Acta Universitatis Upsaliensis

    Author : Xi Chen; Uppsala universitet.; [2019]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. READ MORE

  2. 2. Detection and removal of traps at the SiO2/SiC interface

    University dissertation from Uppsala : Acta Universitatis Upsaliensis

    Author : Halldor Olafsson; [2004]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; interface states; thermally stimulated current TSC ; positron annihilation spectroscopy PAS ; silicon carbide SiC ; metal-oxide-semiconductor field-effect transistor MOSFET ; transmission electron microscopy TEM ; deep level transient spectroscopy DLTS ; metal-oxide-semiconductor MOS ; field-effect mobility; capacitance-voltage C-V ;

    Abstract : The interface between silicon dioxide (SiO2) and silicon carbide (SiC) is at the heart of the SiC metal-oxide-semiconductor field-effect (MOSFET) transistor. The technology to produce a high quality SiO2/SiC interface does not exist today, hampering further development of the SiC MOSFET. READ MORE

  3. 3. On Reliability of SiC Power Devices in Power Electronics

    University dissertation from Stockholm : KTH Royal Institute of Technology

    Author : Diane-Perle Sadik; KTH.; [2017]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE

  4. 4. InAs Nanowire Devices and Circuits

    University dissertation from Electrical and Information Technology, Lund University

    Author : Kristofer Jansson; Lunds universitet.; Lund University.; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Modelling; Circuit; Simulation; Ballistic; Capacitor; Transistor; RF; Band structure; III-V semiconductor; InAs; MOSFET; Metal-oxide-semiconductor field-effect transistor; Nanowire; Amplifier;

    Abstract : Popular Abstract in Swedish Sedan introduktionen av transistorn och den integrerade kretsen har teknologin inom halvledarindustrin utvecklats i en mycket hög takt. Genom att bygga allt mindre och snabbare transistorer har en exponentiell förbättring av prestanda bibehållits sedan 1960-talet, ett fenomen känt som Moores Lag. READ MORE

  5. 5. Vertical InAs Nanowire Devices and RF Circuits

    University dissertation from Lund University

    Author : Martin Berg; Lunds universitet.; Lund University.; [2015]
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; Metal-oxide-semiconductor field-effect transistor; Transistor; Vertical; InAs; III-V semiconductor; Nanowire; Fabrication; DC; Resistor; TLM; RF; Mixer; Circuit.;

    Abstract : Popular Abstract in Swedish Under de senaste årtiondena har prestandan i elektriska kretsar växt i en rasande takt. Detta har lett till otaliga innovationer som har förbättrat samhället. Grunden till denna utveckling grundar sig i två uppfinningar: transistorn och den integrerade kresten. READ MORE