Search for dissertations about: "metal-oxide-semiconductor field-effect transistor MOSFET"

Showing result 21 - 25 of 28 swedish dissertations containing the words metal-oxide-semiconductor field-effect transistor MOSFET.

  1. 21. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

    Author : Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

    Abstract : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. READ MORE

  2. 22. High-Efficiency SiC Power Conversion : Base Drivers for Bipolar Junction Transistors and Performance Impacts on Series-Resonant Converters

    Author : Georg Tolstoy; Hans-Peter Nee; Stig Munk-Nielsen; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Bipolar Junction Transistor BJT ; Resonant converter; Series-resonant converter SLR ; Base drive circuits; High- Efficiency Converters; High-Frequency Converters; Electrical Engineering; Elektro- och systemteknik;

    Abstract : This thesis aims to bring an understanding to the silicon carbide (SiC) bipolar junction transistor (BJT). SiC power devices are superior to the silicon IGBT in several ways. They are for instance, able to operate with higher efficiency, at higher frequencies, and at higher junction temperatures. READ MORE

  3. 23. Fabrication and Characterization of 3C- and4H-SiC MOSFETs

    Author : Romain Esteve; Carl-Mikael Zetterling; Tsunenobu Kimoto; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; MOSFETs; Fabrication; Characterization; Electrical engineering; electronics and photonics; Elektroteknik; elektronik och fotonik; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Abstract : During the last decades, a global effort has been started towards the implementation of energy efficient electronics. Silicon carbide (SiC), a wide band-gap semiconductor is one of the potential candidates to replace the widespread silicon (Si) which enabled and dominates today’s world of electronics. READ MORE

  4. 24. Low-Power Nanowire Circuits and Transistors

    Author : Anil Dey; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : This thesis explores several novel material systems and innovative device concepts enabled by nanowire technology. State-of-the-art fabrication techniques such as electron beam lithography and atomic layer deposition are utilized to achieve high control and quality in the device fabrication. READ MORE

  5. 25. Influence of Electron Charge States in Nanoelectronic Building Blocks

    Author : Johan Piscator; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; silicon nanowire; conductance method; MOS; Schottky barrier lowering; CV; silicon on insulator SOI ; high-k; interface states; Schottky contacts; TSC.;

    Abstract : The continued efforts to improve performance and decrease size of semiconductor logic devices are facing serious challenges. In order to further develop one of the most important nanoelectronic building blocks, the metal-oxide-semiconductor field-effect-transistor (MOSFET), several major problems have to be solved. READ MORE