Search for dissertations about: "metalorganic vapor phase epitaxy"
Showing result 1 - 5 of 6 swedish dissertations containing the words metalorganic vapor phase epitaxy.
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1. Epitaxial Growth, Processing and Characterization of Semiconductor Nanostructures
Abstract : This thesis deals with the growth, processing and characterization of nano-sized structures, eg., self-assembled quantum dots and nano-wires. READ MORE
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2. Understanding the Role of Seed Particle Material on III-As Nanowire Growth
Abstract : III-V semiconductor nanowires have attracted extensive research interests over the past few decades due to their unique geometry and great potential for promoting new functionalities in future electronics, light-emitting diodes and solar cells. However, in order to push this technology beyond the laboratory level, it is essential to combine it with the current Si-based semiconductor industry for affordable production. READ MORE
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3. Doping of Semiconductor Nanowires
Abstract : In this thesis, in situ doping during growth of III-V semiconductor nanowires, primarily for photovoltaic applications, is investigated. The nanowires were grown by metalorganic vapor phase epitaxy (MOVPE), with gold seed particles. READ MORE
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4. Epitaxial Lateral Overgrowth of Indium Phosphide and Its Application in Heteroepitaxy
Abstract : Monolithic integration of optoelectronics on silicon is adream. This thesis deals with the studies on the heteroepitaxyof indium phosphide on silicon substrate towards making thatdream come true. Materials growth issues, characterization anddefect identification are addressed. READ MORE
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5. Realization of Complex III-V Nanoscale Heterostructures
Abstract : Low-dimensional III-V semiconductor nanoscale structures grown by epitaxial processes have emerged as a new class of materials with great promise for various device applications. This thesis describes explorations into the heteroepitaxial growth of III-V semiconductor materials in combination with other III-V materials and in combination with the commonly used Si material, in both thin layer and nanowire geometries. READ MORE