Search for dissertations about: "microwave modeling"

Showing result 1 - 5 of 43 swedish dissertations containing the words microwave modeling.

  1. 1. Microwave and millimeter wave CMOS Characterization, modeling, and design

    Author : Mattias Ferndahl; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; load-pull; microwave; large-signal; silicon; characterization; modeling; balun; LSNA; frequency doubler; millimeter wave; power amplifier; CMOS;

    Abstract : The use of CMOS technologies for microwave and millimeter wave applications has recently been made possible as a result of increased transistor performance. The fT and fmax have, for example, passed 100 GHz at the 130 nm node and 200 GHz at the 65 nm node. READ MORE

  2. 2. Symmetrical FET Modeling

    Author : Ankur Prasad; Chalmers University of Technology; []
    Keywords : switch model; symmetrical model; nonlinear model; small-signal model; GaAs; Microwave FET; GaN;

    Abstract : This thesis deals with empirical modeling of symmetrical Field-Effect Transistors (FETs). It covers three distinct topics within the areas of modeling and parameter extraction of microwave FETs.First, the symmetry of FET devices is addressed. Such devices are often used in transceivers as a building block for switches. READ MORE

  3. 3. Large-Signal Modeling of Microwave Transistors

    Author : Lars Bengtsson; Chalmers University of Technology; []
    Keywords : large-signal; HEMT; non-linear models; de-embedding; high-efficiency; class-E amplifier; LDMOS; HBT; HFET; model parameter extraction; microwave transistors;

    Abstract : The development of computer aided design tools for microwave circuit design has increased the interest for accurate transistor models. The circuit complexity has grown as the CAD tools have been improved and the need to predict how non-linear circuits behave has also been increased. READ MORE

  4. 4. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Author : Vincent Desmaris; Chalmers University of Technology; []
    Keywords : TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE

  5. 5. Microwave FET Modeling and Applications

    Author : Christian Fager; Chalmers University of Technology; []
    Keywords : MESFET; uncertainty; model; FMCW; statistical; HEMT; small-signal; extraction; distortion; intermodulation; CMOS; LDMOS; power amplifier; estimation; FET; large-signal; radar; AM noise;

    Abstract : This thesis deals with three distinct topics within the areas of modeling, analysis and circuit design with microwave field effect transistors (FETs). First, the extraction of FET small-signal model parameters is addressed. READ MORE