Search for dissertations about: "millimeter-wave photonics"

Found 3 swedish dissertations containing the words millimeter-wave photonics.

  2. 1. Millimeter-Wave Photonics: Signal Sources and Transmission Links

    Author : Andreas Wiberg; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; microwave photonics; mm-wave generation; radio over fiber; photonic frequency multiplication; millimeter-wave photonics; millimeter-waves; millimeter-wave communication system;

    Abstract : With the use of higher and higher frequencies in a number of current and future wireless millimeter-wave applications it is beneficial to use photonics for several reasons. The use of optical fibers is an advantageous way to transport millimeter-waves in terms of loss, mechanical flexibility, weight, and insensitivity to electromagnetic interference. READ MORE

  4. 2. Generation, Modulation, and Detection of Signals in Microwave Photonic Systems

    Author : Andreas Wiberg; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Microwave photonics; radio over fiber; mm-wave generation; PSK; QAM; subcarrier modulation; photonic frequency multiplication; spurious free dynamic range third-order intercept point; millimeter-wave photonics; uni-travelling-carrier photodiode; millimeter-wave communication system;

    Abstract : This thesis deals with the use of photonic technology in microwave and millimeter-wave applications. The two major parts of this work have been techniques for transmission and signal generation. READ MORE

  5. 3. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping

    Author : Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zlatko Sitar; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Hot-wall MOCVD; III-nitrides; p-type GaN; HEMTs; Linearity; High-Al barrier;

    Abstract : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. READ MORE