Search for dissertations about: "mobility fluctuations"

Showing result 1 - 5 of 26 swedish dissertations containing the words mobility fluctuations.

2. 1. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

   Author : Martin von Haartman; Mikael Östling; Cor Claeys; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; Electronics; Elektronik;

   Abstract : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. READ MORE

4. 2. Noise Aspects of some Si-based One Port Devices and Carbon Nanotubes

   Author : Hassan Ouacha; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; etching; Schottky contacts; noise; fluctuations; generation; mobility; noise spectroscopy; recombination; p-n diodes; carbon nanotubes; thermal reaction; junction; defects; co-sputtering; irradiation; interface states; low frequency noise;

   Abstract : The p-n junctions and Schottky diodes based on Si1-xGex and SiC are of great importance in modern electronic applications, such as microwave detectors and mixers. Carbon nanotubes (CNTs) have appeared recently as an attractive new class of materials with a reduced dimensionality, and proposed as building blocks for nanoelectronic technology. READ MORE

5. 3. Performance Analysis of Opportunistic Content Distribution via Data-Driven Mobility Modeling

   Author : Ljubica Pajevic; Viktória Fodor; Thrasyvoulos Spyropoulos; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Opportunistic communication; mobility; content distribution; network performance modeling; trace-collection analysis; stochastic models.; Electrical Engineering; Elektro- och systemteknik;

   Abstract : An opportunistic network is formed by co-located mobile users in order to exchange data via direct wireless links when their devices are within transmission range, without relying on the use of fixed network infrastructure. In this thesis we investigate the capabilities of opportunistic networks and cover two main areas: data-driven modeling of user mobility and analytic performance evaluation of location-aware opportunistic content distribution. READ MORE

6. 4. Cryogenic Ultra-Low Noise InP High Electron Mobility Transistors

   Author : Joel Schleeh; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MMIC; LNA; cryogenic; low noise; DC power dissipation; ALD; GaAs MHEMT; gain fluctuations; InP HEMT;

   Abstract : Indium phosphide high electron mobility transistors (InP HEMTs), are today the best transistors for cryogenic low noise amplifiers at microwave frequencies. Record noise temperatures below 2 K using InP HEMT equipped cryogenic low noise amplifiers (LNAs) were demonstrated already a decade ago. READ MORE

7. 5. Low-frequency noise in high-k gate stacks with interfacial layer engineering

   Author : Maryam Olyaei; Bengt Gunnar Malm; Paolo Pavan; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; high k; 1 f noise; low-frequency noise; number fluctuations; mobility fluctuat ions; traps; interfacial layer; TmSiO; Tm 2O3; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. READ MORE