Search for dissertations about: "multiple quantum well"

Showing result 1 - 5 of 61 swedish dissertations containing the words multiple quantum well.

2. 1. GaN/AlN Multiple Quantum Well Structures

   Author : Xinju Liu; Chalmers tekniska högskola; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; GaN; AlN; multiple quantum well; Molecular beam epitaxy; Si 111 ; intersubband transition; sapphire; GaN template;

   Abstract : The III-nitride semiconductors: InN, GaN and AlN are promising for photonic, high power and high temperature electronic devices. Their large and direct band gaps cover the range 0.7 to 6.2 eV, i. READ MORE

4. 2. InGaAs Nanowire and Quantum Well Devices

   Author : Lasse Södergren; NanoLund: Centre for Nanoscience; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowire; quantum well; cryogenic; III-V; InGaAs; MOSFET; MOVPE; Hall; mobility; ballistic; RF;

   Abstract : To fulfill the increasing demand for high-speed electronics used for computation or communication is one everlasting challenge for the semiconductor industry. Emerging fields such as quantum computation also has a need for circuits operating at cryogenic temperatures. READ MORE

5. 3. Surface-normal multiple quantum well electroabsorption modulators : for optical signal processing and asymmetric free-space communication

   Author : Stéphane Junique; Lars Thylén; Uzi Efron; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; spatial light modulators; quantum wells; optical resonator; Fabry–Pérot cavity; electroabsorption modulator; free–space optical communication; Photonics; Fotonik;

   Abstract : Electroabsorption is the physical phenomenon by which the absorption of light in a medium can be controlled by applying an electric field. The Quantum–Confined Stark Effect, which makes the absorption band–edge in quantum wells very field–dependent, together with the strong absorption peak provided by excitons, are the physical foundations for the success of electroabsorption modulators based on quantum well structures in telecommunication networks. READ MORE

6. 4. Resonant Tunneling in Laterally Confined Quantum Structures

   Author : Boel Gustafson; Fasta tillståndets fysik; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; gravitation; relativity; quantum mechanics; classical mechanics; Mathematical and general theoretical physics; Fysik; Physics; High peak-to-valley ratio; Lateral confinement; Quantum dots; Resonant tunneling; Self-assembled quantum dots; Schottky depletion; Buried metal gate; Electron transport; Magnetic-field dependence; Energy level width; Tunneling transistors; Mode coupling; statistical physics; thermodynamics; Matematisk och allmän teoretisk fysik; klassisk mekanik; kvantmekanik; relativitet; statistisk fysik; termodynamik; Technological sciences; Teknik; Fysicumarkivet A:2001:Gustafson;

   Abstract : In the thesis, three-dimensionally confined resonant tunneling structures were studied experimentally. Two approaches were used for obtaining quantum confinement: gate-defined lateral constriction of double barrier structures, and epitaxial growth of self-assembled quantum dots. READ MORE

7. 5. Threshold and Temperature Characteristics of InGa(N)As-GaAs Multiple Quantum Well Lasers

   Author : Göran Adolfsson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaAs; Semiconductor lasers; molecular beam epitaxy; multiple quantum wells; characteristic temperature; temperature dependence; dilute nitrides; ambipolar diffusion; InGa N As;

   Abstract : Semiconductor lasers emitting in the 1.3 μm regime are of interest for applications in access-networks like fiber-to-the-home and radio-over-fiber systems. Suchfiber optical networks are expected to replace the copper-based access-networks currently in use due to a continuously increasing demand on user bandwidth. READ MORE