Search for dissertations about: "nano gap"

Showing result 11 - 15 of 76 swedish dissertations containing the words nano gap.

  2. 11. Electronic structure and transport in exotic nanostructures

    Author : Athanasios Tsintzis; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Nanostructures; Electronic structure; Quantum transport; Nanowires; Quantum dots; Superconductivity; Majorana bound states; Topological insulators; Fysicumarkivet A:2023:Tsintzis;

    Abstract : This thesis explores the physics of nanostructures involving nanowires, quantum dots, superconductors, and topological insulators. These systems serve as excellent platforms for fundamental physics studies and quantum technology applications. READ MORE

  4. 12. Tailoring the Optical Response of III-V Nanowire Arrays

    Author : Mahtab Aghaeipour; Håkan Pettersson; Mats-Erik Pistol; Nicklas Anttu; Lars Samuelson; Constance J. Chang-Hasnain; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V nanowires; absorption; optical modes; photovoltaics; III-V nanowires; absorption; optical modes; photovoltaics; Fysicumarkivet A:2017:Aghaeipour;

    Abstract : Semiconductor nanowires show a great deal of promise for applications in a wide range of important fields, including photovoltaics, biomedicine, and information technology. Developing these exciting applications is strongly dependent on understanding the fundamental properties of nanowires, such as their optical resonances and absorption spectra. READ MORE

  5. 13. Thermoelectric experiments on nanowire-based quantum dots

    Author : Artis Svilans; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Quantum dots; Nanowire; Thermoelectric; Maximum power; Efficientcy; Carnot; Kondo effect; Fysicumarkivet A:2018:Svilans;

    Abstract : This thesis experimentally investigates the possibilities of using quantum effects in semiconductor nanostructures for engineering their thermoelectric properties. More specifically, heterostructured InAs/InP nanowires are used to create short InAs quantum dots (QDs) with electronic state structure resembling that found in atoms. READ MORE

  6. 14. Electrical Characterisation of III-V Nanowire MOSFETs

    Author : Markus Hellenbrand; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model;

    Abstract : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. READ MORE

  7. 15. Theoretical studies of a nanoparticle bridge platform for molecular electronics measurements

    Author : Henrik Löfås; Rajeev Ahuja; Jan Isberg; Anton Grigoriev; Gemma Solomon; Uppsala universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Physics with spec. in Atomic; Molecular and Condensed Matter Physics; Fysik med inriktning mot atom- molekyl- och kondenserande materiens fysik;

    Abstract : The main focus of this thesis is the theoretical investigations of a nanogap platform used for molecular electronics measurements under ambient conditions. The nanogap is about 20 nm wide, while the molecules investigated here (octanethiol(OT) and octanedithiol(ODT)) are about 1-1.5 nm long making it impossible to bridge the gap with one molecule. READ MORE