Search for dissertations about: "nanowire devices"

Showing result 1 - 5 of 126 swedish dissertations containing the words nanowire devices.

  2. 1. Nanowire Superinductors

    Author : David Niepce; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Disordered Superconductors; Superinductance; Superinductor; Resonator; Nanowire; TLS;

    Abstract : In this thesis, we demonstrate that a disordered superconductor with a high kinetic inductance can realize a low microwave loss, non-dissipative circuit element with an impedance greater than the quantum resistance (Rq = h/4e^2 = 6.5kΩ). READ MORE

  4. 2. InAs Nanowire Devices and Circuits

    Author : Kristofer Jansson; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Modelling; Circuit; Simulation; Ballistic; Capacitor; Transistor; RF; Band structure; III-V semiconductor; InAs; MOSFET; Metal-oxide-semiconductor field-effect transistor; Nanowire; Amplifier;

    Abstract : Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by Moore’s Law. READ MORE

  5. 3. Electron Transport in Nanowire Quantum Devices

    Author : Henrik Nilsson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Superconductivity; Spin-orbit coupling; the Kondo effect; the Zeeman effect; Quantum dots; Nanowire memories; Nanowire transistors; InSb; InAs; Nanowires; Electron transport; Andreev reflections; Nanowire RF-SET; Noise in nanowires;

    Abstract : This thesis focuses on electron transport in semiconductor InAs/InP and InSb nanowire quantum devices. However, first the temperature dependence of classical charge transport in InSb nanowire field-effect transistors, FETs, is characterized, using InAs nanowire FETs as a reference. READ MORE

  6. 4. InGaAs Nanowire and Quantum Well Devices

    Author : Lasse Södergren; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowire; quantum well; cryogenic; III-V; InGaAs; MOSFET; MOVPE; Hall; mobility; ballistic; RF;

    Abstract : To fulfill the increasing demand for high-speed electronics used for computation or communication is one everlasting challenge for the semiconductor industry. Emerging fields such as quantum computation also has a need for circuits operating at cryogenic temperatures. READ MORE

  7. 5. Vertical InAs Nanowire Devices and RF Circuits

    Author : Martin Berg; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; Metal-oxide-semiconductor field-effect transistor; Transistor; Vertical; InAs; III-V semiconductor; Nanowire; Fabrication; DC; Resistor; TLM; RF; Mixer; Circuit.;

    Abstract : Recent decades have seen an exponential increase in the functionality of electronic circuits, allowing for continuous innovation, which benefits society. This increase in functionality has been facilitated by scaling down the dimensions of the most important electronic component in modern electronics: the Si-based MOSFET. READ MORE