Search for dissertations about: "nanowire devices"
Showing result 21 - 25 of 126 swedish dissertations containing the words nanowire devices.
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21. Atomic Scale Characterization of III-V Nanowire Surfaces
Abstract : This dissertation focus on the atomic-scale characterization of the surface properties and electronic structure of III–V semiconductor nanowires (NWs). Since the early 2000s, the fabrication and characterization of III–V NWs has been a very significant topic within material science due to their potential for applications in lighting, energy harvesting, and electronics. READ MORE
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22. Nanoelectronic Devices Based on Low-Dimensional Semiconductor Structures
Abstract : The present thesis reports on results from the fabrication technology development and the corresponding electrical transport measurements of low-dimensional semiconductor structures. The focus of the work has been directed towards two parts: the ballistic transport in nanostructure devices at room temperature, and the development of a charge-sensing technique for quantum dots (QD) in nanowires. READ MORE
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23. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors
Abstract : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. READ MORE
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24. Nanowire Transistors and RF Circuits for Low-Power Applications
Abstract : The background of this thesis is related to the steadily increasing demand of higher bandwidth and lower power consumption for transmitting data. The work aims at demonstrating how new types of structures, at the nanoscale, combined with what is referred to as exotic materials, can help benefit in electronics by lowering the consumed power, possibly by an order of magnitude, compared to the industry standard, silicon (Si), used today. READ MORE
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25. Vertical III-V/High-k Nanowire MOS Capacitors and Transistors
Abstract : The emerging nanowire technology in recent years has attracted an increasing interest for high-speed, low-power electronics due to the possibility of a gate-all-around (GAA) geometry enabling aggressive gate length scaling, together with the ease in incorporating high-mobility narrow band gap III-V semiconductors such as InAs on Si substrates. These benefits make vertical nanowire transistors an attractive alternative to the planar devices. READ MORE
