Search for dissertations about: "nanowire fet"

Showing result 1 - 5 of 6 swedish dissertations containing the words nanowire fet.

2. 1. Electron Transport in Nanowire Quantum Devices

   Author : Henrik Nilsson; Fasta tillståndets fysik; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Superconductivity; Spin-orbit coupling; the Kondo effect; the Zeeman effect; Quantum dots; Nanowire memories; Nanowire transistors; InSb; InAs; Nanowires; Electron transport; Andreev reflections; Nanowire RF-SET; Noise in nanowires;

   Abstract : This thesis focuses on electron transport in semiconductor InAs/InP and InSb nanowire quantum devices. However, first the temperature dependence of classical charge transport in InSb nanowire field-effect transistors, FETs, is characterized, using InAs nanowire FETs as a reference. READ MORE

4. 2. Silicon nanowire based devices for More than Moore Applications

   Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
   Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE

5. 3. Integration of Ferroelectric HfO2 onto a III-V Nanowire Platform

   Author : Anton E. O. Persson; Nanoelektronik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; ferroelectricity; ferroelectric FET; ferroelectric tunnel junction; tunnel field effect transistors; HZO; III-V; nanowire;

   Abstract : The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. READ MORE

6. 4. A Biotechnology Perspective on Silicon Nanowire FETs for Biosensor Applications

   Author : Nima Jokilaakso; Amelie Eriksson Karlström; Christer Wingren; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : The study of silicon nanowire-FET-based electronic biosensor applications is an emerging scientific field. These biosensors have the benefit of being theoretically extremely sensitive and reports of down to femtomolar (fM) levels of biomolecule detection have been reported. READ MORE

7. 5. Vertical III-V Nanowire Transistors for Low-Power Logic and Reconfigurable Applications

   Author : Zhongyunshen Zhu; Nanoelektronik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : With rapid increase in energy consumption of electronics used in our daily life, the building blocks — transistors — need to work in a way that has high energy efficiency and functional density to meet the demand of further scaling. III-V channel combined with vertical nanowire gate-all-around (GAA) device architecture is a promising alternative to conventional Si transistors due to its excellent electrical properties in the channel and electrostatic control across the gate oxide in addition to reduced footprint. READ MORE