Search for dissertations about: "nanowire"

Showing result 6 - 10 of 205 swedish dissertations containing the word nanowire.

  2. 6. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

    Author : Adam Jönsson; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

    Abstract : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. READ MORE

  4. 7. InGaAs Nanowire and Quantum Well Devices

    Author : Lasse Södergren; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowire; quantum well; cryogenic; III-V; InGaAs; MOSFET; MOVPE; Hall; mobility; ballistic; RF;

    Abstract : To fulfill the increasing demand for high-speed electronics used for computation or communication is one everlasting challenge for the semiconductor industry. Emerging fields such as quantum computation also has a need for circuits operating at cryogenic temperatures. READ MORE

  5. 8. Kinetic and Thermodynamic Modeling of Nanowire Growth

    Author : Erik Mårtensson; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; Nanowire; GaAs; InAs; Monte Carlo; Kinetics; Thermodynamics; III-V; Simulation; Fysicumarkivet A:2021:Mårtensson;

    Abstract : This thesis aims to expand on the fundamental knowledge of crystal growth, selectively focusing on the area of particle-seeded nanowire growth in the III-V materials system. The growth process is complex. READ MORE

  6. 9. Vertical InAs Nanowire Devices and RF Circuits

    Author : Martin Berg; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; Metal-oxide-semiconductor field-effect transistor; Transistor; Vertical; InAs; III-V semiconductor; Nanowire; Fabrication; DC; Resistor; TLM; RF; Mixer; Circuit.;

    Abstract : Recent decades have seen an exponential increase in the functionality of electronic circuits, allowing for continuous innovation, which benefits society. This increase in functionality has been facilitated by scaling down the dimensions of the most important electronic component in modern electronics: the Si-based MOSFET. READ MORE

  7. 10. Electrical Characterisation of III-V Nanowire MOSFETs

    Author : Markus Hellenbrand; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; TFET; III-V; Nanowire; Hysteresis; Low-Frequency Noise; Random Telegraph Noise; cryogenic; Reliability; Radio Frequency; Small-Signal Model;

    Abstract : The ever increasing demand for faster and more energy-efficient electricalcomputation and communication presents severe challenges for the semiconductor industry and particularly for the metal-oxidesemiconductorfield-effect transistor (MOSFET), which is the workhorse of modern electronics. III-V materials exhibit higher carrier mobilities than the most commonly used MOSFET material Si so that the realisation of III-V MOSFETs can enable higher operation speeds and lower drive voltages than that which is possible in Si electronics. READ MORE