Search for dissertations about: "noisefigure"

Found 3 swedish dissertations containing the word noisefigure.

  2. 1. Phase Sensitive Amplifiers for Free-Space Optical Communications

    Author : Ravikiran Kakarla; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Phase sensitive amplifier; sensitivity; optical injection locking; noisefigure;

    Abstract : The demand for high data rate free-space communications is increasing due to the planned future space exploration missions. In the next few years there is a need to increase the speed by 100 times according to NASA, and this necessitates that transmission systems operate at higher carrier frequencies. READ MORE

  4. 2. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers

    Author : Pirooz Chehrenegar; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gallium nitride GaN ; radio base station receiver; cascode; high linearity; robustness.; cascade; high electron mobility transistor HEMT ; low noise; low noise amplifier;

    Abstract : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. READ MORE

  5. 3. Ultra-Low Power InAs/AlSb HEMTs for Cryogenic Low-Noise Applications

    Author : Giuseppe Moschetti; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; low noise; InAs AlSb; metamorphic; low power; high frequency; high electron mobility transistor HEMT ; cryogenic; ion implantation;

    Abstract : The InAs/AlSb high electron mobility transistor (HEMT) is an emerging microwave device technology for ultra-low power and low noise applications. Due to the low bandgap (0. READ MORE