Search for dissertations about: "ohmic contact"
Showing result 1 - 5 of 35 swedish dissertations containing the words ohmic contact.
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1. Thermally stable electrical contacts to 6H silicon carbide
Abstract : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform. Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. READ MORE
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2. Ohmic Contacts and Thin Film Resistors for GaN MMIC Technologies
Abstract : Gallium nitride (GaN) based high electron mobility transistor (HEMT) technology has attracted much attention during the last decade which has resulted in a rapid development in material quality and device performance. GaN HEMT microwave electronics are currently finding its applications in wireless communication infrastructure and radar systems. READ MORE
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3. Atom-Probe Field-Ion Microscopy of Electronic Materials
Abstract : This thesis presents work in which atom-probe field-ion microscopy (APFIM) has been applied to two types of electronic materials. In the case of metal/GaAs contacts, the purpose was to characterise the microstructure of the contact interface, particularly the chemical composition variation across the interface. READ MORE
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4. Optimization of Ohmic Contacts and Surface Passivation for ‘Buffer-Free’ GaN HEMT Technologies
Abstract : Gallium nitride high electron mobility transistors (GaN HEMTs) draw attention from high frequency and high power industries due to unique properties including high electron mobility and saturation velocity combined with high breakdown voltage. This makes GaN HEMTs suitable for power devices with high switching speed and high frequency applications with high power density requirements. READ MORE
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5. Fabrication and Characterization of Silicon Carbide Power Bipolar Junction Transistors
Abstract : Silicon carbide bipolar junction transistors (BJTs) are attractive power switching devices because of the unique material properties of SiC with high breakdown electric field, high thermal conductivity and high saturated drift velocity of electrons. The SiC BJT has potential for very low specific on-resistances and this together with high temperature operation makes it very suitable for applications with high power densities. READ MORE