Search for dissertations about: "oxide defects"

Showing result 1 - 5 of 98 swedish dissertations containing the words oxide defects.

  1. 1. The Buried Oxide of Silicon on Insulator Materials

    Author : Per Ericsson; Chalmers University of Technology; []
    Keywords : oxide defects; internal oxidation; aluminum oxide; wafer bonding; SOI; silicon on insulator; buried oxide;

    Abstract : The buried oxide of silicon on insulator (SOI) wafers plays an important role in the operation of electronic devices made on such materials. The presence of defects in the buried oxide can seriously degrade the performance of a circuit. READ MORE

  2. 2. Surface Reactivity and Electronic Structure of Metal Oxides

    Author : Anneli Önsten; Ulf Karlsson; Anne Borg; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; oxides; surfaces; defects; cuprous oxide; zinc oxide; magnetite; water; OH; sulfur dioxide; photoelectron spectroscopy; scanning tunneling microscopy; Material physics with surface physics; Materialfysik med ytfysik;

    Abstract : The foci of this thesis are the metal oxides Cu2O, ZnO and Fe3O4 and their interaction with water and sulfur dioxide (SO2). The intention is to study SO2-induced atmospheric corrosion on a molecular level. All studies are based on photoelectron spectroscopy (PES) and scanning tunneling microscopy (STM) measurements. READ MORE

  3. 3. Electrical Characterization of Metal-Oxide-Silicon Structures with Ultra Thin Oxide Layers

    Author : Per Lundgren; Chalmers University of Technology; []
    Keywords : tunneling; MTOS; oxide defects; MOS; PMA;

    Abstract : Metal-oxide-semiconductor (MOS) structures with very thin (2 - 4 nm) oxide layers thermally grown on silicon have been electrically characterized regarding oxide and interface defects and concerning the direct tunnel current through the oxide. This thesis comprises eight papers which deal with the appearance of oxide charge during electrical stress (papers A, D, E), the beneficial effect on the defect density of low-temperature (up to 350 °C) post-metallization annealing (PMA) (paper A, B, C, G), and the effect of temperature and choice of metal for the tunnel current (paper F, H). READ MORE

  4. 4. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization

    Author : Lars-Åke Ragnarsson; Chalmers University of Technology; []
    Keywords : PMA; interface state densities; silicon; aluminum oxide; Pb; ultrathin; RPECVD; MOS;

    Abstract : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. READ MORE

  5. 5. Memory Effects on Iron Oxide Filled Carbon Nanotubes

    Author : Carlos Cava; Clas Persson; Lucimara Roman; Krister Svensson; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Memory devices; Carbon Nanotubes; energy; nanotechnology; Iron Oxide;

    Abstract : In this Licentiate Thesis, the properties and effects of iron and iron oxide filled carbon nanotube (Fe-CNT) memories are investigated using experimental characterization and quantum physical theoretical models. Memory devices based on the simple assembly of Fe-CNTs between two metallic contacts are presented as a possible application involving the resistive switching phenomena of this material. READ MORE