Search for dissertations about: "p-type"
Showing result 1 - 5 of 114 swedish dissertations containing the word p-type.
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1. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping
Abstract : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. READ MORE
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2. Determining the effects of regulatory parameters on the structural dynamics of P-type ATPase membrane transporters
Abstract : Proteins are macromolecular machines with roles in all cellular activities and structures. The functional properties of each protein is the result of its combination of 3D-structure and inherent dynamics, and a wealth of structural and dynamic mechanisms have evolved to regulate protein activity. READ MORE
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3. P-type ATPases studied by electron microscopy and two-dimensional crystallization
Abstract : Electron microscopy and two-dimensional crystallography have been used to study the molecular structures of the porcine renal Na+,K+-ATPase and the porcine gastric H+,K+-ATPase. In addition, morphological changes have been observed with electron cryomicroscopy from tubulovesicles in porcine gastric mucosae. READ MORE
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4. Exploring Dye-Sensitized Mesoporous NiO Photocathodes : from Mechanism to Applications
Abstract : Increasing attention has been paid on solar energy conversion since the abundant solar energy possesses the potential to solve the problems on energy crisis and climate change. Dye-sensitized mesoporous NiO film was developed as one of the attractive photocathodes to fabricate p-type dye-sensitized solar cells (p-DSCs) and dye-sensitized photoelectrosynthetic cells (p-DSPECs) for electricity and chemical fuels generation, respectively. READ MORE
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5. P-type and polarization doping of GaN in hot-wall MOCVD
Abstract : The devolopment of group-III nitride semiconductor technology continues to expand rapidly over the last two decades. The indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with a wide bandgap range, spanning from infrared(IR) to deep-ultraviolet (UV), enabling their utilization in optoelectronic industry. READ MORE