Search for dissertations about: "parasitic capacitance"

Showing result 11 - 15 of 26 swedish dissertations containing the words parasitic capacitance.

  2. 11. Control and Design Aspects of Components and Systems in High-Voltage Converters for Industrial Applications

    Author : Per Ranstad; Hans-Peter Nee; Alfred Rufer; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; High-voltage converter; resonant converter; high-voltage transformer; transformer parasitics; IGBT; soft-switching; control; Electric power engineering; Elkraftteknik;

    Abstract : High-frequency dc-dc converters are widely used in power electronic applications, both in consumer products and industrial products. By operating the converter at higher frequencies both a smaller size and better control characteristics can be obtained. READ MORE

  4. 12. III-V Nanowires for High-Speed Electronics

    Author : Fredrik Lindelöw; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; Hall; DC; RF; Nanowire; MOSFET; Hall; DC; RF;

    Abstract : III-V compound materials have long been used in RF applications in high-electron-mobility-transistors (HEMTs) and bipolar-junction-transistors (BJTs). Now, III-V is also being viewed as a material candidate for replacing silicon in the n-channel in CMOS processes for increased drive currents and reduced power consumption in future nodes. READ MORE

  5. 13. Core Switching Noise for On-Chip 3D Power Distribution Networks

    Author : Waqar Ahmad; Hannu Tenhunnen; Atila Alvandpour; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : Reducing the interconnect size with each technology node and increasing speed with each generation increases IR-drop and Ldi/dt noise. In addition to this, the drive for more integration increases the average current requirement for modern ULSI design. READ MORE

  6. 14. Vertical Nanowire High-Frequency Transistors

    Author : Sofia Johansson; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nanowires; III-V semiconductors; metal-oxide-semiconductor field-effect transistors; border traps; high-k;

    Abstract : This thesis explores a novel transistor technology based on vertical InAs nanowires, which could be considered both for low-power high-frequency analog applications and for replacing Si CMOS in the continued scaling of digital electronics. The potential of this device - the vertical InAs nanowire MOSFET – lies in the combination of the outstanding transport properties of InAs and the improved electrostatic control of the gate-all-around geometry. READ MORE

  7. 15. Effects of impurities on charge transport in graphene field-effect transistors

    Author : Marlene Bonmann; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; carrier transport; electron and hole mobility; impurities; traps; graphene; field-effect transistors; microwave devices; saturation velocity; remote phonons;

    Abstract : In order to push the upper frequency limit of high speed electronics further, thereby extending the range of applications, new device technologies and materials are continuously investigated. The 2D material graphene, with its intrinsically extremely high room temperature charge carrier velocity, is regarded as a promising candidate to push the frequency limit even further. READ MORE