Search for dissertations about: "parasitic capacitance"

Showing result 16 - 20 of 26 swedish dissertations containing the words parasitic capacitance.

2. 16. Applications of Si1-xGex alloys for Ge devices and monolithic 3D integration

   Author : Konstantinos Garidis; Per-Erik Hellström; Mikael Östling; Sten Vollebregt; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon; germanium; epitaxy; selective; pn junction; germanium on insulator; GOI; Ge PFET; bonding; monolithic; sequential; three dimensional; 3D; low temperature; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. READ MORE

4. 17. EMI from Switched Converters – Simulation Methods and Reduction Techniques

   Author : Andreas Henriksson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; state space methods; EMI; semiconductor device modeling; diode reverse recovery; diode modeling; conducted emissions; Semiconductor device measurements; DC DC converters;

   Abstract : In this thesis, the conducted EMI from switched power converters has been analyzed using various existing models, own-derived models as well as measurements. The ingoing passive components in a switching converter have been modeled with respect to their high frequency behavior and the static and dynamic behavior of the active semiconductors has been analyzed. READ MORE

5. 18. Vertical Heterostructure III-V MOSFETs for CMOS, RF and Memory Applications

   Author : Adam Jönsson; Nanoelektronik; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; CMOS; RRAM; III-V; InAs; GaSb; InGaAs; Heterostructure; vertical; nanowire NW ; MOSFET; III-V materials; RRAM; RF; CMOS; InAs; GaSb; InGaAs; heterostructure; Vertical nanowire;

   Abstract : This thesis focuses mainly on the co-integration of vertical nanowiren-type InAs and p-type GaSb MOSFETs on Si (Paper I & II), whereMOVPE grown vertical InAs-GaSb heterostructure nanowires areused for realizing monolithically integrated and co-processed all-III-V CMOS.Utilizing a bottom-up approach based on MOVPE grown nanowires enablesdesign flexibilities, such as in-situ doping and heterostructure formation,which serves to reduce the amount of mask steps during fabrication. READ MORE

6. 19. Graphene field-effect transistors and devices for advanced high-frequency applications

   Author : Marlene Bonmann; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; traps; graphene; self-heating; field-effect transistors; remote phonons; carrier transport; saturation velocity; microwave devices; impurities and defects;

   Abstract : New device technologies and materials are continuously investigated, in order to increase the bandwidth of high-speed electronics, thereby extending data rate and range of applications. The 2D-material graphene, with its intrinsically extremely high charge carrier velocity, is considered as a promising new channel material for advanced high frequency field-effect transistors. READ MORE

7. 20. Model Based Enhancement of Bioimpedance Spectroscopy Analysis : Towards Textile Enabled Applications

   Author : Rubén Buendía López; Kaj Lindecrantz; Javier Rosell-Ferrer; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Physiological measurements; Bioimpedance; modelling; textiles;

   Abstract : Several signal processing approaches have been developed to overcome the effect of stray capacitances in Electrical Bioimpedance Spectroscopy (EBIS) measurements. EBIS measurements obtained with textile-enabled instrumentation are more vulnerable to stray capacitances. READ MORE