Search for dissertations about: "phd electronic materials"

Showing result 16 - 20 of 43 swedish dissertations containing the words phd electronic materials.

  1. 16. Optical studies of AlN and GaO based nanostructures using Mueller matrix spectroscopic ellipsometry

    Author : Samiran Bairagi; Kenneth Järrendahl; Ching-Lien Hsiao; Bruno Gallas; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; GLAD; MMSE; PVD; III-nitrides; Oxides; Anisotropy; Bandgap;

    Abstract : This thesis explores the diverse optical properties manifested when light interacts with various materials, with an emphasis on circular polarization- and bandgaprelated phenomena. The studies in this work are centered around Mueller matrix spectroscopic ellipsometry, with the objective of synthesizing and characterizing nanostructured and high-quality thin films to expand our understanding of the optical properties arising from their underlying structure and electronic transitions, respectively. READ MORE

  2. 17. Epitaxial strategies for defect reduction in GaN for vertical power devices

    Author : Rosalia Delgado Carrascon; Vanya Darakchieva; Plamen Paskov; Peter Ramvall; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Group-III nitride materials, gallium nitride (GaN), aluminum nitride (AlN) and indium nitride (InN) have direct band gaps with band gap energies ranging from the infrared (InN) to the ultraviolet (GaN) and to the deep ultraviolet (AlN) wavelengths and covering the entire spectral range from 0.7 eV to 6.2 eV upon alloying. READ MORE

  3. 18. Hot-wall MOCVD for advanced GaN HEMT structures and improved p-type doping

    Author : Alexis Papamichail; Vanya Darakchieva; Anelia Kakanakova-Gueorguieva; Jr-Tai Chen; Zlatko Sitar; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Hot-wall MOCVD; III-nitrides; p-type GaN; HEMTs; Linearity; High-Al barrier;

    Abstract : The transition to energy efficient smart grid and wireless communication with improved capacity require the development and optimization of next generation semiconductor technologies and electronic device components. Indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AlN) compounds and their alloys are direct bandgap semiconductors with bandgap energies ranging from 0. READ MORE

  4. 19. Image dipoles and polarons in organic semiconductors

    Author : Yongzhen Chen; Mats Fahlman; Xianjie Liu; Yiqiang Zhan; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Organic electronics; Interface dipole; Polaron; Conjugated polymer; Photoelectron spectroscopy; N-type doping; Electron transport material;

    Abstract : The rapid development of organic electronics depends on the synthesis of new π-conjugated molecules/polymers and the exploration of fundamental physics. However, most of the efforts have been concentrated on the former, leading to a lack of thorough understanding of many important concepts, which will become the ultimate limiting factor for overall performance and applications. READ MORE

  5. 20. Switching Kinetics and Charge Transport in Organic Ferroelectrics

    Author : Tim Cornelissen; Martijn Kemerink; Mats Fahlman; Kamal Asadi; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Organic Electronics; Ferroelectrics; Organic Ferroelectrics;

    Abstract : The continued digitalization of our society means that more and more things are getting connected electronically. Since currently used inorganic electronics are not well suited for these new applications because of costs and environmental issues, organic electronics can play an important role here. READ MORE