Search for dissertations about: "power semiconductor devices"

Showing result 1 - 5 of 137 swedish dissertations containing the words power semiconductor devices.

  1. 1. Waste-heat Recovery Using Thermoelectricity and Silicon Carbide Power Electronics

    Author : Arash Edvin Risseh; Hans-Peter Nee; Torbjörn Thiringer; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; Thermoelectricity; Power converter; Silicon Carbide; MOSFET; Power management; Thermoelectric generator; Renewable energy; Vehicle; Power electronic; Waste heat; Ultra-low inductance; Power module; Termoelektrisk energiomvandling; Kiselkarbid MOSFET; Effektomvandlare; Förnybar energikälla; Effektelektronik; Spillvärme; Effektmodul; Låg induktiv module; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Energy consumption in the world has increased continuously due to a growing population and increased energy consumption per capita. Moreover, the largest part of consumed energy still comes from fossil sources which in 2016 was more than 130 PWh. READ MORE

  2. 2. Silicon Carbide Microwave Devices

    Author : Joakim Eriksson; Chalmers University of Technology; []
    Keywords : SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Abstract : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. READ MORE

  3. 3. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    Author : Erik Velander; Hans-Peter Nee; Francesco Iannuzzo; KTH; []
    Keywords : Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE

  4. 4. On Reliability of SiC Power Devices in Power Electronics

    Author : Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
    Keywords : ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE

  5. 5. Modelling and design of high-power HBV multipliers

    Author : Mattias Ingvarson; Chalmers University of Technology; []
    Keywords : thermal limitations; semiconductor; millimetre and sub-millimetre wave power source; varactor diode; frequency multiplier; heterostructure barrier varactor;

    Abstract : This thesis deals with symmetric varactor frequency multipliers for millimetre and sub-millimetre wave applications. Much of the material presented is general and applicable to any type of (symmetric) varactor, but the focus is on the heterostructure barrier varactor (HBV). The basic function and principles of HBVs are explained. READ MORE