Search for dissertations about: "purge flow"

Found 3 swedish dissertations containing the words purge flow.

  2. 1. Cavity Purge Flows in High Pressure Turbines

    Author : Johan Dahlqvist; Björn Laumert; Jens Fridh; Paul Beard; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; turbomachinery; axial turbine; cavity purge; purge flow; wheelspace; rim seal; spanwise transport; radial transport; effectiveness; cooling; efficiency; strömningsmaskiner; axialturbin; kavitetsrensningsflöde; kavitetsflöde; tätkant; spännviddsvis transport; radiell transport; effektivitet; kylning; verkningsgrad; Energy Technology; Energiteknik;

    Abstract : Turbomachinery forms the principal prime mover in the energy and aviation industries. Due to its size, improvements to this fleet of machines have the potential of significant impact on global emissions. READ MORE

  4. 2. Surface-Controlled Chemical Vapor Deposition of Silicon Carbide

    Author : Jing-Jia Huang; Henrik Pedersen; Urban Forsberg; Örjan Danielsson; Ulf Jansson; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : Polycrystalline cubic silicon carbide, 3C-SiC, has long been investigated in the field of hard coating materials. The typical synthesis method for 3C-SiC coatings is thermal chemical vapor deposition (CVD) using either multicomponent precursors, e.g. methyltrichlorosilane, or a combination of single component precursors, e. READ MORE

  5. 3. Model-based Analysis and Design of Atomic Layer Deposition Processes

    Author : Anders Holmqvist; Avdelningen för kemiteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Atomic layer deposition; Heterogeneous reaction kinetics; Limit-cycle dynamics; Parameter estimation; Multi-objective optimization; Dynamic optimization; Scale-up analysis;

    Abstract : Atomic layer deposition (ALD) is a thin-film manufacturing process in which the growth surface is exposed to non-overlapping alternating injections of gas-phase chemical precursor species separated by intermediate purge periods to prevent gas-phase reactions. ALD is characterized by sequential self-terminating heterogeneous reactions between highly reactive gas-phase precursor species and surface-bound species which, when allowed sufficient conditions to reach saturation, results in highly conformal films, on both planar and topographically complex structures. READ MORE