Search for dissertations about: "reliability model"

Showing result 1 - 5 of 676 swedish dissertations containing the words reliability model.

  2. 1. Reliability-centred maintenance : identification of management and organisational aspects when introducing RCM

    Author : Fredrik Backlund; Luleå tekniska universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Kvalitetsteknik; Quality Technology and Management;

    Abstract : Increased demands on productivity, quality and cost-efficiency affecting manufacturing trends towards increased complexity and higher degree of process automation. A major break down in such a manufacturing system may generate severe damage on productivity, environment and personnel. READ MORE

  4. 2. On conceptual design reliability : an approach for identification of potential failures

    Author : Micael Derelöv; Linköpings universitet; []
    Keywords : Conceptual Design; Potential Failure; Evaluation; Reliability; TECHNOLOGY; TEKNIKVETENSKAP;

    Abstract : This thesis is the result of research in the area of Evaluation and Decision-Making in the Design Process. It examines how to support and facilitate the evaluation activities in the design process in order to create a more solid foundation on which to base design decisions. READ MORE

  5. 3. Structural Reliability and Identification with Stochastic Simulation - Application to Railway Mechanics

    Author : Sadegh Rahrovani; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; model reduction; time-integration; finite element model; sleeper-ballast load characterization; stochastic simulation; Bayesian system identification;

    Abstract : System identification of structures based on measured response data can play a key role in improving reliability based structural designs. However, the experimental limitations of in situ tests and uncertainties of required model complexity together with the inverse nature of system identification give rise to a number of challenging issues. READ MORE

  6. 4. Integration of Enterprise Modeling and Model Driven Development : A Meta-Model and a Tool Prototype

    Author : Iyad Zikra; Janis Stirna; Jelena Zdravkovic; Anne Persson; Stockholms universitet; []
    Keywords : SAMHÄLLSVETENSKAP; SOCIAL SCIENCES; Model-Driven Development; MDD; Enterprise Modeling; EM; Meta-model; Prototype; Design Science; Tool Implementation; informationssystem; Information Systems;

    Abstract : The use of models for designing and developing Information Systems (IS) has changed in recent years. Models are no longer considered a peripheral documentation medium that is poorly maintained and often neglected. READ MORE

  7. 5. On Reliability of SiC Power Devices in Power Electronics

    Author : Diane-Perle Sadik; Hans-Peter Nee; Per Ranstad; Nando Kaminski; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; Metal-Oxide-Semiconductor Field-Effect Transistor MOSFET ; Junction Field-Effect Transistor JFET ; Bipolar Junction Transistor BJT ; Reliability; Failure Analysis; Reliability Testing; Short- Circuit Currents; Humidity; Resonant converter; Series-resonant converter SLR ; Base drive circuits; Gate drive circuits; Life-Cycle Cost Analysis LCCA ; Kiselkarbid; MOSFETar; JFETar; Bipolär Junction Transistor BJT ; Tillförlitlighet; Robusthet; Felanalys; Tillförlitlighetstestning; Kortslutningsströmmar; Luftfuktighet; Resonansomvandlare; Serie-resonansomvandlare SLR ; Basdrivkretsar; Gate-drivkretsar; Felskydd; Livscykelkostnadsanalys; Electrical Engineering; Elektro- och systemteknik;

    Abstract : Silicon Carbide (SiC) is a wide-bandgap (WBG) semiconductor materialwhich has several advantages such as higher maximum electric field, lowerON-state resistance, higher switching speeds, and higher maximum allowablejunction operation temperature compared to Silicon (Si). In the 1.2 kV - 1. READ MORE