Search for dissertations about: "rf-applications"

Showing result 1 - 5 of 8 swedish dissertations containing the word rf-applications.

  2. 1. III-V Nanowires for High-Speed Electronics

    Author : Fredrik Lindelöw; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; Hall; DC; RF; Nanowire; MOSFET; Hall; DC; RF;

    Abstract : III-V compound materials have long been used in RF applications in high-electron-mobility-transistors (HEMTs) and bipolar-junction-transistors (BJTs). Now, III-V is also being viewed as a material candidate for replacing silicon in the n-channel in CMOS processes for increased drive currents and reduced power consumption in future nodes. READ MORE

  4. 2. Low Voltage CMOS Radio Receiver Front-End Design

    Author : Fred Tillman; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Elektroteknik; Electrical engineering; Elektronik; Electronics; Elektronik och elektroteknik; Electronics and Electrical technology; Polyphase Filter; Quadrature Signals; Nonlinearity; Distortion; Passive Mixer; Mixer; Low Noise Amplifier; CMOS; Front-End; Low Voltage; Radio; Receiver;

    Abstract : The mass production of integrated circuits for digital electronics has made CMOS technology the most frequently used IC process today. Thanks to the large production volume, CMOS has increasingly become the most cost efficient technology of choice, and the fast development of small, high speed CMOS devices has made the technology feasible for many RF applications. READ MORE

  5. 3. High Frequency Analysis of Silicon RF MOS Transistors

    Author : Johan Ankarcrona; Jörgen Olsson; Kjell Jeppson; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; RF-power; LDMOS; Microwave transistor; SOI; Silicon; MOSFET; Elektronik; Electronics; Elektronik;

    Abstract : Today, the silicon technology is well established for RF-applications (f~1-100 GHz), with emphasis on the lower frequencies (f < 5 GHz). The field of RF power devices is extensive concerning materials and devices. One of the important RF-devices is the silicon LDMOS transistor. READ MORE

  6. 4. Characterisation and Modelling of Graphene FETs for Terahertz Mixers and Detectors

    Author : MICHAEL ANDERSSON; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; graphene; millimetre and submillimetre waves; power detectors; nonlinear device modelling; microwave amplifiers; nanofabrication; integrated circuits; noise modelling; Field-effect transistors FETs ; terahertz detectors; Volterra; subharmonic resistive mixers;

    Abstract : Graphene is a two-dimensional sheet of carbon atoms with numerous envisaged applications owing to its exciting properties. In particular, ultrahigh-speed graphene field effect transistors (GFETs) are possible due to the unprecedented carrier velocities in ideal graphene. READ MORE

  7. 5. Microwave CMOS Beamforming Transmitters

    Author : Johan Wernehag; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Beamforming transmitter; CMOS; frequency doubling power amplifier; polyphase filter; phase shifting;

    Abstract : The increase of the consumer electronics market the last couple of decades has been one of the main drivers of IC process technology development. The majority of the ICs are used in digital applications, and for these CMOS is the choice of technology. The urge to squeeze more transistors on to a given area has led to shrinking feature sizes. READ MORE