Search for dissertations about: "schottky transistor"

Showing result 1 - 5 of 26 swedish dissertations containing the words schottky transistor.

  2. 1. Spin Transport in Two-Dimensional Material Heterostructures

    Author : André Dankert; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Black phosphorous; Topological insulator; h-BN; Silicon; Transistor; Spintronic; MoS2; Graphene; 2D materials; Spin polarized tunnelling; Schottky barrier;

    Abstract : Spintronics is considered as an alternative for information processing beyond the charge based technology. The spintronic device performance depend on the spin relaxation mechanisms in the channel material. Si and graphene are interesting for their long spin coherence lengths and ideal for spin transport channels. READ MORE

  4. 2. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs

    Author : Zhen Zhang; Shi-Li Zhang; Tsu-Jae King Liu; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS technology; MOSFET; FinFET; Schottky diode; Schottky barrier soure drain; silicide; SALICIDE; SOI; multiple-gate; nanowire; sidewall transfer lithography; Electronics; Elektronik;

    Abstract : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. READ MORE

  5. 3. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters

    Author : Erik Velander; Hans-Peter Nee; Francesco Iannuzzo; KTH; []
    Keywords : Power semiconductor devices; DC-AC power converters; Silicon carbide; Insulated gate bipolar transistors; P-i-n diodes; Schottky diodes; Traction motors; Power MOSFET; Krafthalvledare; DC-AC kraftomvandlare; kiselkarbid; IGBT; P-i-n dioder; Schottky dioder; traktionsmotorer; Effekt-MOSFET; Electrical Engineering; Elektro- och systemteknik;

    Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE

  6. 4. Processing, Characterization and Modeling of AlGaN/GaN HEMTs

    Author : Vincent Desmaris; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; HEMT; III-Nitride processing; microwave modeling; AlGaN GaN; HFET; heterojunction field effect transistor; microwave devices; III-Nitride; Schottky diodes; Gallium nitride; resistive mixer; high electron mobility transistor; wide bandgap;

    Abstract : III-Nitrides electronic properties make them currently the materials of choice for high-power high-frequency applications. Their wide bandgaps, high breakdown fields, the high electron peak and saturation velocities combined with the large conduction band offset and the high electron mobility observed in AlGaN/GaN heterostructures enable excellent microwave power performance of AlGaN/GaN high electron mobility transistors (HEMTs). READ MORE

  7. 5. Studies of Light Emitting Devices Based on Er-doped Si and SiGe Layered Structures

    Author : Chun-Xia Du; Fransesco Priolo; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; electroluminescence; diode; transistor; hot electron; recombination; excitation; de-excitation; Auger effect; molecular beam epitaxy; Er; Si; SiGe;

    Abstract : Doping with rare earth element erbium (Er) in Si has recently attracted a lot of research interest due to potential applications in Si-based opto-electronics. By using molecular beam epitaxy (MBE), precipitate-free Er-doping in Si has been made together with other co-dopants, e.g., oxygen (0) and fluorine (F), up to a level ∼1020 cm-3. READ MORE