Search for dissertations about: "self-assembled dots"

Showing result 1 - 5 of 20 swedish dissertations containing the words self-assembled dots.

2. 1. Densities and Sizes of Self-assembled Quantum Dots Grown by MOVPE

   Author : Jonas Johansson; Fasta tillståndets fysik; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Self-assembled quantum dots; Metal organic vapour phase epitaxy; Physics; Stranski-Krastanow; Fysicumarkivet 2000:Johansson; Halvledarfysik; Semiconductory physics; Fysik;

   Abstract : This thesis is based on results concerning the formation of semiconductor self-assembled quantum dots. The quantum dots have been grown by metal organic vapour phase epitaxy in the Stranski-Krastanow growth mode. READ MORE

4. 2. Optical characterization of Silicon-based self-assembled nanostructures

   Author : Bouchaib Adnane; Wei-Xin Ni; Per Olof Holtz; Göran Hansson; Susumo Fukatsu; Linköpings universitet; []
   Keywords : NATURAL SCIENCES; NATURVETENSKAP;

   Abstract : This PhD thesis summarizes the work carried on the optical characterizations of some Si-based self-assembled nanostructures, particularly SiGe/Si quantum dots (QDs) and nanocrystalline (nc)-Si embedded in mesoporous silica (MS) using photoconductivity (PC), photoluminescence (PL), and photoluminescence excitation (PLE) measurements. The spectroscopic studies of SiGe/Si QDs grown on Si by molecular beam epitaxy revealed for the first time well-resolved PLE resonances. READ MORE

5. 3. MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures

   Author : Niclas Carlsson; Fasta tillståndets fysik; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; low-dimensional structures; metalorganic vapour phase epitaxy; quantum wells; self-assembled dots; quantum dots; Fysicumarkivet A:1998:Carlsson; Halvledarfysik;

   Abstract : Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. READ MORE

6. 4. Resonant Tunneling in Laterally Confined Quantum Structures

   Author : Boel Gustafson; Fasta tillståndets fysik; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; gravitation; relativity; quantum mechanics; classical mechanics; Mathematical and general theoretical physics; Fysik; Physics; High peak-to-valley ratio; Lateral confinement; Quantum dots; Resonant tunneling; Self-assembled quantum dots; Schottky depletion; Buried metal gate; Electron transport; Magnetic-field dependence; Energy level width; Tunneling transistors; Mode coupling; statistical physics; thermodynamics; Matematisk och allmän teoretisk fysik; klassisk mekanik; kvantmekanik; relativitet; statistisk fysik; termodynamik; Technological sciences; Teknik; Fysicumarkivet A:2001:Gustafson;

   Abstract : In the thesis, three-dimensionally confined resonant tunneling structures were studied experimentally. Two approaches were used for obtaining quantum confinement: gate-defined lateral constriction of double barrier structures, and epitaxial growth of self-assembled quantum dots. READ MORE

7. 5. Carrier dynamics in semiconductor quantum dots

   Author : Jörg Siegert; Ari Friberg; Jesper Mørk; KTH; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; quantum dots; photoluminescence; time-resolved; spectroscopy; semiconductor; Optics; Optik;

   Abstract : This thesis presents results of time-resolved photoluminescence experiments conducted on several different self-assembled InGaAs/GaAs and InAs/GaAs semiconductor quantum dot (QD) structures. Depending on the application in mind, different structural, electronic or optical properties have a different weight of importance. READ MORE