Search for dissertations about: "semi-insulating materials"

Showing result 1 - 5 of 13 swedish dissertations containing the words semi-insulating materials.

2. 1. Epitaxy, analysis and application of semi-insulating III-V materials

   Author : David Söderström; KTH; []
   Keywords : InP; GaInP; semi-insulating materials; iron doping; ruthenium doping; HVPE; diffusion; deep levels; capture cross sections; resistivity analysis; buried heterostructure laser;

   Abstract : Semi-insulating (SI) III-V materials can provide electricalisolation for integration and capacitance minimisation for highspeed operation. Compared to the polyimides, these can offerbetter thermal conduction. Ever since the fabrication of thefirst SI III-V materials, transition metals have been utilisedas deep impurities to impart SI properties. READ MORE

4. 2. Structural and Electronic Properties of Graphene on 4H- and 3C-SiC

   Author : Chamseddine Bouhafs; Vanya Darakchieva; Rozitsa Yakimova; Ivan Gueorguiev Ivanov; Jacek Baranowski; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES;

   Abstract : Graphene is a one-atom-tick carbon layer arranged in a honeycomb lattice. Graphene was first experimentally demonstrated by Andre Geim and Konstantin Novoselov in 2004 using mechanical exfoliation of highly oriented pyrolytic graphite (exfoliated graphene flakes), for which they received the Nobel Prize in Physics in 2010. READ MORE

5. 3. Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth

   Author : Carlos Angulo Barrios; KTH; []
   Keywords : semiconductor lasers; in-plane lasers; VCSELs; GaAs; GaInP; semi-insulating materials; hydride vapour phase epitaxy; regrowth; buried heterostructure; leakage current; simulation;

   Abstract : Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. READ MORE

6. 4. Study of novel electronic materials by mid-infrared and terahertz optical Hall effect

   Author : Nerijus Armakavicius; Vanya Darakchieva; Philipp Kühne; Mircea Modreanu; Linköpings universitet; []
   Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

   Abstract : Development of silicon based electronics have revolutionized our every day life during the last three decades. Nowadays Si based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. READ MORE

7. 5. Structural studies of InGaAsP/InP-based lasers : By Thomas Kallstenius

   Author : Thomas Kallstenius; Uppsala universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; Materialvetenskap; Materials science; Teknisk materialvetenskap; materialvetenskap; Materials Science;

   Abstract : Reliable buried-heterostructure (BH) InGaAsP/InP-based laser diodes (LDs) is essentialto the operation of fiber optics communication systems. In this thesis, the structural,electrical and optical properties of such LDs have been studied. The aim has been toidentify materials-related mechanisms causing gradual emission degradation. READ MORE