Search for dissertations about: "semi-insulating"

Showing result 1 - 5 of 27 swedish dissertations containing the word semi-insulating.

  2. 1. Epitaxy, analysis and application of semi-insulating III-V materials

    Author : David Söderström; KTH; []
    Keywords : InP; GaInP; semi-insulating materials; iron doping; ruthenium doping; HVPE; diffusion; deep levels; capture cross sections; resistivity analysis; buried heterostructure laser;

    Abstract : Semi-insulating (SI) III-V materials can provide electricalisolation for integration and capacitance minimisation for highspeed operation. Compared to the polyimides, these can offerbetter thermal conduction. Ever since the fabrication of thefirst SI III-V materials, transition metals have been utilisedas deep impurities to impart SI properties. READ MORE

  4. 2. Gallium arsenide based buried heterostructure laser diodes with aluminium-free semi-insulating materials regrowth

    Author : Carlos Angulo Barrios; KTH; []
    Keywords : semiconductor lasers; in-plane lasers; VCSELs; GaAs; GaInP; semi-insulating materials; hydride vapour phase epitaxy; regrowth; buried heterostructure; leakage current; simulation;

    Abstract : Semiconductor lasers based on gallium arsenide and relatedmaterials are widely used in applications such as opticalcommunication systems, sensing, compact disc players, distancemeasurement, etc. The performance of these lasers can beimproved using a buried heterostructure offering lateralcarrier and optical confinement. READ MORE

  5. 3. Silicon device substrate and channel characteristics influenced by interface properties

    Author : Mikael Johansson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; channel; attenuation; zro2; interface; traps; semi-insulating; high-k; mos; cross-talk; hfo2;

    Abstract : This thesis is divided in two parts, one dealing with the depleted Si/Si structure, which is a substrate behaving as a semi-insulating material intended for radio-frequency applications and the other concerning high-k gate dielectrics (dielectrics with high dielectric constant) as the replacement for silicon dioxide as MOS gate dielectric.High frequency applications of CMOS integrated circuits, to lower cost, achieve higher performance and richer functionality, depends partly on the possibility to decrease the substrate coupling between different parts of the circuit. READ MORE

  6. 4. Simulation and optical characterisation of carrier trapping in semi-insulating semiconductors

    Author : Andreas Gaarder; KTH; []
    Keywords : ;

    Abstract : .... READ MORE

  7. 5. Wafer Bonding - Problems and Possibilities

    Author : Mats Bergh; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SOI; atomic force microscope; micromechanics; compliant substrates; wafer bonding; semi-insulating silicon; AFM; surface chemistry; diamond; silicon on insulator; aluminium nitride; microelectronics; surface roughness;

    Abstract : The wafer bonding technology offers a unique opportunity to combine different materials. This has been used for the realisation of novel silicon on insulator (SOI) structures. By replacing the buried silicon dioxide layer with a polycrystalline diamond film the thermal properties of the SOI structure are improved. READ MORE