Search for dissertations about: "semiconductor device modeling"

Showing result 16 - 20 of 20 swedish dissertations containing the words semiconductor device modeling.

  1. 16. Infrared Photodetectors based on Nanowire Arrays with Embedded Quantum Heterostructures

    Author : Mohammad Karimi; NanoLund: Centre for Nanoscience; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Nanowires; infrared photodetectors; intersubband nanowire photodetector; quantum discs-in-nanowire; high responsivity;

    Abstract : Optical sensors operating in the infrared range of the electromagnetic spectrum are key components in a variety ofapplications including optical communication, night vision, medical diagnosis, surveillance, and astronomy.Semiconductor nanowires have great potential for realizing broadband infrared photodetectors with excellentresponsivity, low dark current and low noise, and a unique compatibility with commercial silicon-based electronics. READ MORE

  2. 17. Fluorinated SiC CVD

    Author : Pontus Stenberg; Erik Janzén; Henrik Pedersen; Angel Yanguas-Gil; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. READ MORE

  3. 18. The transistor, with emphasis on its use for radio frequency telecommunication

    Author : Ted Johansson; Dag Sigurd; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : This thesis is about transistors, integrated circuits and techniques to fabricate electronic devices in semiconductor materials. The most important application area for the transistors studied in the thesis is radio frequency telecommunication. READ MORE

  4. 19. Low-frequency noise in high-k gate stacks with interfacial layer engineering

    Author : Maryam Olyaei; Bengt Gunnar Malm; Paolo Pavan; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; CMOS; high k; 1 f noise; low-frequency noise; number fluctuations; mobility fluctuat ions; traps; interfacial layer; TmSiO; Tm 2O3; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. READ MORE

  5. 20. Interface Phenomena in Organic Electronics

    Author : Qinye Bao; Mats Fahlman; Xianjie Liu; Slawomir Braun; Mathieu Turbiez; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY;

    Abstract : Organic electronics based on organic semiconductors offer tremendous advantages compared to traditional inorganic counterparts such as low temperature processing, light weight, low manufacturing cost, high throughput and mechanical flexibility. Many key electronic processes in organic electronic devices, e.g. READ MORE