Search for dissertations about: "semiconductor diode"

Showing result 1 - 5 of 67 swedish dissertations containing the words semiconductor diode.

  2. 1. Semiconductor Nanowires: Epitaxy and Applications

    Author : Thomas Mårtensson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; semiconductor; nanotechnology; nanowires; crystal growth; metal-organic vapour phase epitaxy; III-V; silicon; MOVPE; light-emitting diode; single-electron transistor; cell;

    Abstract : Semiconductor nanowires are nanoscale objects formed by bottom-up synthesis. In recent years their unique properties have been exploited in fields such as electronics, photonics, sensors and the life sciences. In this work, the epitaxial growth of nanowires and their applications were studied. READ MORE

  4. 2. EMI from Switched Converters – Simulation Methods and Reduction Techniques

    Author : Andreas Henriksson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; state space methods; EMI; semiconductor device modeling; diode reverse recovery; diode modeling; conducted emissions; Semiconductor device measurements; DC DC converters;

    Abstract : In this thesis, the conducted EMI from switched power converters has been analyzed using various existing models, own-derived models as well as measurements. The ingoing passive components in a switching converter have been modeled with respect to their high frequency behavior and the static and dynamic behavior of the active semiconductors has been analyzed. READ MORE

  5. 3. Modelling and design of high-power HBV multipliers

    Author : Mattias Ingvarson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; thermal limitations; semiconductor; millimetre and sub-millimetre wave power source; varactor diode; frequency multiplier; heterostructure barrier varactor;

    Abstract : This thesis deals with symmetric varactor frequency multipliers for millimetre and sub-millimetre wave applications. Much of the material presented is general and applicable to any type of (symmetric) varactor, but the focus is on the heterostructure barrier varactor (HBV). The basic function and principles of HBVs are explained. READ MORE

  6. 4. Silicon Carbide Microwave Devices

    Author : Joakim Eriksson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

    Abstract : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. READ MORE

  7. 5. Simulation and Characterization of Silicon Carbide Power Bipolar Junction Transistors

    Author : Benedetto Buono; Mikael Östling; Gunnar Malm; Martin Domeij; Lothar Frey; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon carbide; power device; BJT; diode; simulation; characterization; current gain; on-resistance; breakdown voltage; forward voltage drop; degradation; SRA - ICT; SRA - Informations- och kommunikationsteknik;

    Abstract : The superior characteristics of silicon carbide, compared with silicon, have suggested considering this material for the next generation of power semiconductor devices. Among the different power switches, the bipolar junction transistor (BJT) can provide a very low forward voltage drop, a high current capability and a fast switching speed. READ MORE