Search for dissertations about: "semiconductor quantum wells"

Showing result 1 - 5 of 28 swedish dissertations containing the words semiconductor quantum wells.

  1. 1. Carrier dynamics in semiconductor quantum dots

    Author : Jörg Siegert; Ari Friberg; Jesper Mørk; KTH; []
    Keywords : NATURAL SCIENCES; NATURVETENSKAP; NATURVETENSKAP; NATURAL SCIENCES; quantum dots; photoluminescence; time-resolved; spectroscopy; semiconductor; Optics; Optik;

    Abstract : This thesis presents results of time-resolved photoluminescence experiments conducted on several different self-assembled InGaAs/GaAs and InAs/GaAs semiconductor quantum dot (QD) structures. Depending on the application in mind, different structural, electronic or optical properties have a different weight of importance. READ MORE

  2. 2. Effects of the Spin-Orbit Interaction on Transport and Optical Properties of III-V Semiconductor Quantum Wells

    Author : Vladimir Froltsov; Matematisk fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; spin-orbit interaction; quantum well; III-V; Raman scattering; magnetoresistance; weak localization; spin distribution; magnetic field; Fysik; Physics; Fysicumarkivet A:2000:Froltsov; Halvledarfysik; Semiconductory physics; semiconductor;

    Abstract : Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically. It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes. READ MORE

  3. 3. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures

    Author : Bernhard Kowalski; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; optically detected spin resonance; spin resonance; effective g-value; III-V semiconductors; low-dimensional structures; quantum wells; quantum dots; Stranski-Krastanow; photoluminescence; GaInAs; single dot Magneto-luminescence; Fysicumarkivet A:1997:Kowalski; Halvledarfysik; Semiconductory physics; GaInAs-InP;

    Abstract : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. READ MORE

  4. 4. MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures

    Author : Niclas Carlsson; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; Semiconductory physics; low-dimensional structures; metalorganic vapour phase epitaxy; quantum wells; self-assembled dots; quantum dots; Fysicumarkivet A:1998:Carlsson; Halvledarfysik;

    Abstract : Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. READ MORE

  5. 5. Dilute Nitride Lasers and Spectrally Engineered Semiconductor Laser Resonators

    Author : Göran Adolfsson; Chalmers University of Technology; []
    Keywords : single mode laser; transfer matrix method; threshold current; InGaAs; GaAs; multiple quantum wells; dilute nitrides; two-color laser; GaInNAs; Semiconductor lasers; molecular beam epitaxy; characteristic temperature; temperature dependence; ambipolar diusion; Fabry-Perot resonator; spectral engineering;

    Abstract : The first part of this thesis deals with long wavelength (1.2-1.3 um) InGaAs(N)multiple quantum-well (QW) lasers grown on GaAs, with the aim of understandingand improving their threshold and temperature characteristics. The epitaxialmaterial is grown by molecular beam epitaxy (MBE). READ MORE