Search for dissertations about: "semiconductor quantum wells"
Showing result 1 - 5 of 34 swedish dissertations containing the words semiconductor quantum wells.
-
1. Carrier dynamics in semiconductor quantum dots
Abstract : This thesis presents results of time-resolved photoluminescence experiments conducted on several different self-assembled InGaAs/GaAs and InAs/GaAs semiconductor quantum dot (QD) structures. Depending on the application in mind, different structural, electronic or optical properties have a different weight of importance. READ MORE
-
2. Effects of the Spin-Orbit Interaction on Transport and Optical Properties of III-V Semiconductor Quantum Wells
Abstract : Effects of the intrinsic electron spin-orbit interaction on transport and optical properties of III-V semiconductor quantum wells have been studied theoretically. It is shown that due to crystal anisotropy of this interaction, the weak localization magnetoresistance in a magnetic field parallel to interfaces is very sensitive to the epitaxy growth direction and also to the orientation of the magnetic field with respect to the crystal axes. READ MORE
-
3. Zeeman Interaction in Low-Dimensional III-V Semiconductor Structures
Abstract : The Zeeman interaction in low-dimensional III-V semiconductor nanostructures is studied. The effective g-value of bulk InGaAs is measured by two different spin resonance techniques. Experimental conditions were found to control the Overhauser effect, thus enabling a highly accurate determination of the g-value, g* = -4.070 ± 0. READ MORE
-
4. MOVPE Growth and Characterization of Low-Dimensional III-V Semiconductor Structures
Abstract : Metalorganic vapour phase epitaxy is used for growth of low-dimensional III-V semiconductor structures. The roughness of heterointerfaces in GaAs/GaInP quantum well structures is studied by photoluminescence emission from extremely narrow quantum wells. READ MORE
-
5. Dilute Nitride Lasers and Spectrally Engineered Semiconductor Laser Resonators
Abstract : The first part of this thesis deals with long wavelength (1.2-1.3 um) InGaAs(N)multiple quantum-well (QW) lasers grown on GaAs, with the aim of understandingand improving their threshold and temperature characteristics. The epitaxialmaterial is grown by molecular beam epitaxy (MBE). READ MORE