Search for dissertations about: "semiconductor quantum wells"

Showing result 16 - 20 of 34 swedish dissertations containing the words semiconductor quantum wells.

  2. 16. Metamorphic Heterostructures and Lasers on GaAs

    Author : Ivar Tångring; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; NATURVETENSKAP; NATURAL SCIENCES; metamorphic heterostructures; InGaAs quantum well; graded buffer layer; Semiconductor laser; GaAs; molecular beam epitaxy; telecom laser;

    Abstract : The objective of this thesis is to demonstrate the metamorphic growth of heterostructure lasers on GaAs substrates. Many heterostructure devices have their performance limited by the need to grow on lattice-matched substrates. READ MORE

  4. 17. Epitaxial growth optimization for 1.3-um InGaAs/GaAs Vertical-Cavity Surface-Emitting lasers

    Author : Zhenzhong Zhang; Mattias Hammar; Nicolae Chitica; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; VCSEL MOVPE InGaAs GaAs quantum wells; Semiconductor physics; Halvledarfysik;

    Abstract : Long-wavelength (1.3-μm) vertical-cavity surface-emitting lasers (VCSELs) are of great interest as low-cost, high performance light sources for fiber-optic metro and access networks. During recent years the main development effort in this field has been directed towards all epitaxial GaAs-based structures by employing novel active materials. READ MORE

  5. 18. Transport phenomena in quantum wells and wires in presence of disorder and interactions

    Author : Valeria Vettchinkina; Matematisk fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; time-dependent density-functional theory; disorder; electron correlation; Lowdimensional semiconducting systems; transport phenomena; Fysicumarkivet F:2012:Vettchinkina;

    Abstract : Present-day electronics employ circuits of smaller and smaller dimensions, and today the length scales are so small that the laws of physics which rule micro-cosmos, quantum mechanics, become directly important. This thesis reports on theoretical work on electron transport in different nanostructures. READ MORE

  6. 19. Radio Frequency InGaAs MOSFETs

    Author : Navya Sri Garigapati; NanoLund: Centre for Nanoscience; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; III-V compound semiconductor; InGaAs MOSFET; Quantum well; Nanowire; Radio Frequency; Band structure calculation; k.p calculations; Strain engineering; ballistic electron transport; S-parameters;

    Abstract : III-V-based Indium gallium arsenide is a promising channel material for high-frequency applications due to its superior electron mobility property. In this thesis, InGaAs/InP heterostructure radio frequency MOSFETs are designed, fabricated, and characterized. READ MORE

  7. 20. Photoluminescence Characteristics of III-Nitride Quantum Dots and Films

    Author : Martin Eriksson; Per-Olof Holtz; Peder Bergman; Fredrik Karlsson; Volodymyr Khranovskyy; Yasuhiko Arakawa; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES; NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : III-Nitride semiconductors are very promising in both electronics and optical devices. The ability of the III-Nitride semiconductors as light emitters to span the electromagnetic spectrum from deep ultraviolet light, through the entire visible region, and into the infrared part of the spectrum, is a very important feature, making this material very important in the field of light emitting devices. READ MORE