Search for dissertations about: "sequential integration"

Showing result 1 - 5 of 44 swedish dissertations containing the words sequential integration.

  2. 1. Silicon nanowire based devices for More than Moore Applications

    Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE

  4. 2. Sequential 3D Integration - Design Methodologies and Circuit Techniques

    Author : Panagiotis Chaourani; Ana Rusu; Saul Rodriguez; Per-Erik Hellström; Georges Gielen; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; sequential 3D integration; monolithic inter-tier vias; design platforms; parasitic extraction flows; RF AMS circuits; inductors; heterogeneous integration; germanium transistors; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Sequential 3D (S3D) integration has been identified as a potential candidate for area efficient ICs. It entails the sequential processing of tiers of devices, one on top the other. READ MORE

  5. 3. Germanium layer transfer and device fabrication for monolithic 3D integration

    Author : Ahmad Abedin; Mikael Östling; Cor Claeys; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Monolithic; sequential; 3D; silicon; germanium; wafer bonding; etch back; germanium on insulator; GOI; Ge pFET; low temperature; Sipassivation; pn junction; Kisel; germanium; epitaxi; selektiv; pn-övergång; germanium påisolator; GOI; Ge PFET; bonding; monolitisk; sekventiell; tre dimensionell; 3D; lågtemperarad;

    Abstract : Monolithic three-dimensional (M3D) integration, it has been proposed,can overcome the limitations of further circuits’ performance improvementand functionality expansion. The emergence of the internet of things (IoT) isdriving the semiconductor industry toward the fabrication of higher-performancecircuits with diverse functionality. READ MORE

  6. 4. Applications of Si1-xGex alloys for Ge devices and monolithic 3D integration

    Author : Konstantinos Garidis; Per-Erik Hellström; Mikael Östling; Sten Vollebregt; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon; germanium; epitaxy; selective; pn junction; germanium on insulator; GOI; Ge PFET; bonding; monolithic; sequential; three dimensional; 3D; low temperature; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : As the semiconductor industry moves beyond the 10 nm node, power consumption constraints and reduction of the negative impact of parasitic elements become important. Silicon germanium (Si1−xGex) alloys have been used to amplify the performance of Si based devices and integrated circuits (ICs) for decades. READ MORE

  7. 5. Sequential Monte Carlo methods for conjugate state-space models

    Author : Anna Wigren; Fredrik Lindsten; Lawrence Murray; Riccardo Sven Risuleo; Simon Maskell; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Sequential Monte Carlo; Particle filter; Markov chain Monte Carlo; Conjugacy; State-space model; Probabilistic programming; Electrical Engineering with specialization in Signal Processing; Elektroteknik med inriktning mot signalbehandling;

    Abstract : Bayesian inference in state-space models requires the solution of high-dimensional integrals, which is intractable in general. A viable alternative is to use sample-based methods, like sequential Monte Carlo, but this introduces variance into the inferred quantities that can sometimes render the estimates useless. READ MORE