Search for dissertations about: "si nanowire"

Showing result 1 - 5 of 50 swedish dissertations containing the words si nanowire.

  2. 1. Electronic Sensors Based on Nanostructured Field-Effect Devices

    Author : Si Chen; Shili Zhang; Jan Linnros; Christian Schönenberger; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; biosensor; field-effect transistor; nanowire; ISFET; Elektronik; Electronics;

    Abstract : Point-of-care (POC) diagnostics presents a giant market opportunity with profound societal impact. In particular, specific detection of DNA and protein markers can be essential for early diagnosis of e.g. cancer, cardiovascular disease, infections or allergies. READ MORE

  4. 2. Silicon Nanowire Based Electronic Devices for Sensing Applications

    Author : Qitao Hu; Zhen Zhang; Shi-Li Zhang; Si Chen; Jeehwan Kim; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; silicon nanowire; field-effect transistor; nanoelectromechanical resonator; CMOS-compatible; multiplexed detection; single charge detection; quantum sensing; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : Silicon nanowire (SiNW) based electronic devices fabricated with a complementary metal-oxide-semiconductor (CMOS) compatible process have wide-range and promising applications in sensing area. These SiNW sensors own high sensitivity, low-cost mass production possibility, and high integration density. READ MORE

  5. 3. Silicon Nanowire Field-Effect Devices as Low-Noise Sensors

    Author : Xi Chen; Zhen Zhang; Shi-Li Zhang; Si Chen; Fengnian Xia; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon nanowire; field-effect transistor; Schottky junction gate; low frequency noise; ion sensor; Teknisk fysik med inriktning mot elektronik; Engineering Science with specialization in Electronics;

    Abstract : In the past decades, silicon nanowire field-effect transistors (SiNWFETs) have been explored for label-free, highly sensitive, and real-time detections of chemical and biological species. The SiNWFETs are anticipated for sensing analyte at ultralow concentrations, even at single-molecule level, owing to their significantly improved charge sensitivity over large-area FETs. READ MORE

  6. 4. Vertical III-V Nanowire MOSFETs

    Author : Olli-Pekka Kilpi; Nanoelektronik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Nanowire; MOSFET; III-V; InGaAs; Vertical; Heterostructure; High frequency;

    Abstract : Vertical III-V nanowire MOSFETs are interesting candidates for future digital and analog applications. High electron velocity III-V materials allow fabrication of low power and high frequency MOSFETs. Vertical vapor-liquid-solid growth enables fabrication of axial and radial heterostructure nanowires. READ MORE

  7. 5. InAs Nanowire Devices and Circuits

    Author : Kristofer Jansson; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Modelling; Circuit; Simulation; Ballistic; Capacitor; Transistor; RF; Band structure; III-V semiconductor; InAs; MOSFET; Metal-oxide-semiconductor field-effect transistor; Nanowire; Amplifier;

    Abstract : Since the introduction of the transistor and the integrated circuit, the semiconductor industry has developed at a remarkable pace. By continuously fabricating smaller and faster transistors, it has been possible to maintain an exponential increase in performance, a phenomenon famously described by Moore’s Law. READ MORE