Search for dissertations about: "sic epitaxy"
Showing result 1 - 5 of 32 swedish dissertations containing the words sic epitaxy.
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1. CVD solutions for new directions in SiC and GaN epitaxy
Abstract : This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. READ MORE
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2. Growth and characterization of SiC and GaN
Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE
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3. Sublimation Growth of 3C-SiC : From Thick Layers to Bulk Material
Abstract : Silicon carbide (SiC) is a semiconductor material which holds high promises for various device applications. It can be obtained in different crystal structures called polytypes. The most common ones are hexagonal (6H- and 4H-SiC) and cubic (3C-SiC) silicon carbide. READ MORE
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4. Vapor phase deposition of WO and WC
Abstract : WO3 and WC are two compounds that are widely used for a number of different thin film applications. In this thesis, these compounds have been deposited using two different deposition methods: atomic layer epitaxy (ALE) and chemical vapor deposition (CVD). READ MORE
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5. Microstructure aspects of transition metal carbide thin films
Abstract : Transition metal carbides are important refractory materials used in many thin film applications. In this thesis, several transition metal carbides have been deposited using different chemical vapour deposition (CVD) and evaporation processes. In particular, the phase composition and microstructure of these carbide films have been studied. READ MORE