Search for dissertations about: "sic microwave devices"

Showing result 1 - 5 of 14 swedish dissertations containing the words sic microwave devices.

2. 1. Silicon Carbide Microwave Devices

   Author : Joakim Eriksson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SBD; high-power microwave devices; Silicon Carbide; diode mixer; wide band gap devices; physical simulations; resistive mixer; microwave devices; MESFET; Schottky diode;

   Abstract : This work deals with silicon carbide (SiC) microwave devices. It treats two devices; the Schottky diode and the metal semiconductor field effect transistor (MESFET). Different MESFET materials, fabrication processes, theoretical models for physical simulation, and device models are presented. READ MORE

4. 2. SiC Varactors for Dynamic Load Modulation of Microwave Power Amplifiers

   Author : Christer Andersson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; nonlinear characterization; varactors; active load-pull; power; microwave; amplifier; dynamic load modulation; SiC; energy efficiency;

   Abstract : The rapid consumer adoption of mobile services is leading to an exponential growth in wireless data traffic. In order to accommodate more concurrent high data-rate users, the required complexity of transmitting radio base station (RBS) power amplifiers (PAs) is increasing. READ MORE

5. 3. Microwave power device characterization

   Author : Kristoffer Andersson; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; statistical estimation; self-heating; Silicon Carbide; Gallium Nitride; mixer; thermal resistance; wide bandgap; microwave; error-correction; small-signalmodel;

   Abstract : The first part of the thesis covers work done on device characterizationmethods. A statistical method for estimating small-signal model parametersin FET-models was proposed. A maximum likelihood estimator wasderived and the new method was compared to a standard direct extractiontechnique. READ MORE

6. 4. Development of SiC MESFET Based MMIC Technology

   Author : Mattias Sudow; Chalmers tekniska högskola; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MIM capacitor; high power amplifier; limiter; SiC MMIC; SiC MESFET; SiC Schottky; TFR; high levelmixer; spiral inductor; via-hole;

   Abstract : A SiC MESFET based MMIC process has been successfully developed. This technology has its main potential in high power microwave circuits. It will offer the benefits of the high integration seen in GaAs MMIC at the same time as it will offer the benefits of the high voltage operation seen in Si LDMOS and Si BJTs. READ MORE

7. 5. Silicon Carbide Microwave Transistors and Amplifiers

   Author : Rolf Jonsson; Linköpings universitet; []
   Keywords : SiC; MESFET; Physical simulations; Microwave power amplifier; NATURAL SCIENCES; NATURVETENSKAP;

   Abstract : Ibis work deals with silicon carbide (SiC) metal semieonduetor field effect transistors (MESFETs) and microwave amplifiers using them. The wide bandgap (WBG) semiconductors silicon carbide and gallium nitride have a large potential for microwave power generation. READ MORE