Search for dissertations about: "sic semiconductor"

Showing result 1 - 5 of 100 swedish dissertations containing the words sic semiconductor.

  2. 1. Ultrahigh-Voltage Silicon Carbide Device Performance, Requirements, and Limitations in High-Power Applications

    Author : Daniel Johannesson; Hans-Peter Nee; Staffan Norrga; Muhammad Nawaz; Alberto Castellazzi; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; 4H-SiC; Current Filamentation; Device Characterization; Dynamic Avalanche; JTE Structure; Junction Termination Extension Design; SiC BJT; SiC GTO Thyristor; SiC IGBT; SiC MOSFET; SiC PiN Diode; Silicon Carbide; TCAD Simulation; Wide bandgap device; Electrical Engineering; Elektro- och systemteknik;

    Abstract : The increased awareness of the on-going climate change accelerates the electric energy system transformation from fossil-fueled power sources towards systems with larger portions of renewable energy sources. Moreover, the grid infrastructure requires reinforcements to cope with increasing electrical energy demand. READ MORE

  4. 2. Wide Bandgap Semiconductor (SiC & GaN) Power Amplifiers in Different Classes

    Author : Sher Azam; Qamar Wahab; Jörgen Olsson; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Wide bandgap; SiC; MESFET; GaN; HEMT; Power Amplifiers; Materials science; Teknisk materialvetenskap;

    Abstract : SiC MESFETs and GaN HEMTs have an enormous potential in high-power amplifiers at microwave frequencies due to their wide bandgap features of high electric breakdown field strength, high electron saturation velocity and high operating temperature. The high power density combined with the comparably high impedance attainable by these devices also offers new possibilities for wideband power microwave systems. READ MORE

  5. 3. SiC CMOS and memory devices for high-temperature integrated circuits

    Author : Mattias Ekström; Carl-Mikael Zetterling; B. Gunnar Malm; Tobias Erlbacher; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; bismuth titanate Bi4Ti3O12 ; CMOS; ferroelectric capacitor; field oxide; inverter; metallisation; metal oxide semiconductor field effect transistor MOSFET ; ohmic contacts; ring oscillator; semiconductor processing; silicon carbide 4H-SiC ; CMOS; ferroelektrisk kondensator; fältoxid; halvledartillverkning; inverterare; kiselkarbid 4H-SiC ; metallisering; MOSFET; ohmska kontakter; ringoscillator; vismuttitanat Bi4Ti3O12 ; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : High-temperature electronics find use in extreme environments, like data logging in downhole drilling for geothermal energy production, inside of high-temperature turbines, industrial gas sensors and space electronics. The simplest systems use a sensor and a transmitter, but more advance electronic systems would additionally require a microcontroller with memory. READ MORE

  6. 4. Optical Properties of Low Dimensional Semiconductor Materials

    Author : Tiantian Han; Ying Fu; Per-Olof Holtz; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Semiconductor; Low dimensional; optics; Physics; Fysik;

    Abstract : This dissertation presents a serial study on optical properties of different semiconductor materials. Three main types of studies are addressed: The role of doping levels of N and Al atoms in the room-temperature photoluminescence (PL) of 4H-SiC films for optoelectronic applications; the use of a basic Monte Carlo method combined with probability calculations of the time-dependent Schroedinger equation to manifest multi-photon absorption and emission of II-VI compound quantum dots (QDs) for bioimaging; a theoretical quantum chemistry approach to study of structure and optical properties of InGaAsN and GaAs clusters for laser technology applications. READ MORE

  7. 5. Fluorinated SiC CVD

    Author : Pontus Stenberg; Erik Janzén; Henrik Pedersen; Angel Yanguas-Gil; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES;

    Abstract : For the emerging semiconductor material silicon carbide (SiC) used in high power devices, chemical vapor deposition (CVD) is the most prominent method to create the electrically active SiC epitaxial layers in the device. The process of growing such epitaxial layers is to use a hydrocarbon and silane diluted in hydrogen flow through a hot chamber where chemical reactions take place in such manner that Si and C finally deposit on the surface creating epitaxial SiC. READ MORE