Search for dissertations about: "sige layers"

Showing result 1 - 5 of 21 swedish dissertations containing the words sige layers.

  2. 1. Near-infrared photodetectors based on Si/SiGe nanostructures

    Author : Anders Elfving; Wei-Xin Ni; Thomas P. Pearsall; Linköpings universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; SiGe; Ge dots; nanostructures; molecular beam epitaxy; photodetector; Semiconductor physics; Halvledarfysik;

    Abstract : Two types of photodetectors containing Ge/Si quantum dots have been fabricated based on materials grown by molecular beam epitaxy and characterized with several experimental techniques. The aim was to study new device architectures with the implementation of Ge nanostructures, in order to obtain high detection efficiency in the near infrared range at room temperature. READ MORE

  4. 2. Source and drain engineering in SiGe-based pMOS transistors

    Author : Christian Isheden; Mikael Östling; Simon Deleonibus; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Electronics; SiGe; source drain; shallow junctions; pMOS; process integration; CVD; epitaxy; etching; Ni silicide; contact resistivity; Elektronik; Electronics; Elektronik;

    Abstract : A new shallow junction formation process, based on selective silicon etching followed by selective growth of in situ B-doped SiGe, is presented. The approach is advantageous compared to conventional ion implantation followed by thermal activation, because perfectly abrupt, low resistivity junctions of arbitrary depth can be obtained. READ MORE

  5. 3. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

    Author : Martin von Haartman; Mikael Östling; Cor Claeys; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; Electronics; Elektronik;

    Abstract : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. READ MORE

  6. 4. Growth and characterisation of Si and SiGe layers

    Author : Cyril Menon; KTH; []
    Keywords : ;

    Abstract : .... READ MORE

  7. 5. Integration of epitaxial SiGe(C) layers in advanced CMOS devices

    Author : Julius Hållstedt; Henry Radamson; Eugene A. Fitzgerald; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Silicon Germanium Carbon SiGeC ; Chemical Vapor Deposition CVD ; Epitaxy; Pattern Dependency; MOSFET; Mobility; Spacer Gate Technology; Semiconductor physics; Halvledarfysik;

    Abstract : Heteroepitaxial SiGe(C) layers have attracted immense attention as a material for performance boost in state of the art electronic devices during recent years. Alloying silicon with germanium and carbon add exclusive opportunities for strain and bandgap engineering. READ MORE