Search for dissertations about: "silan"
Showing result 1 - 5 of 6 swedish dissertations containing the word silan.
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1. Organic Electrochemical Transistors : Materials and Challenges
Abstract : The use of organic mixed ionic-electronic conductors (OMIECs) has demonstrated the potential to transform the field of bioelectronics, spanning from medical diagnostics to neuromorphic computing hardware. To keep up with the fast-paced demands, it is crucial to develop customizable device fabrication, design new materials, improve operation stability, and explore the ion-electron interactions within OMIECs. READ MORE
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2. Hydrophobic Impregnation of Concrete Structures : Effects on Concrete Properties
Abstract : Hydrophobic impregnations often referred to as water repellent agents, today mainly consisting of alkylalkoxysilanes, are often used on concrete to prolong the service life of the structure. This is accomplished by protecting the reinforcement bars from chlorides or by changing the moisture content inside. READ MORE
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3. Polyethylene/metal oxide nanocomposites for electrical insulation in future HVDC-cables : probing properties from nano to macro
Abstract : Nanocomposites of polyethylene and metal oxide nanoparticles have shown to be a feasible approachto the next generation of insulation in high voltage direct current cables. In order to reach an operationvoltage of 1 MV new insulation materials with reduced conductivity and increased breakdown strengthas compared to modern low-density polyethylene (LDPE) is needed. READ MORE
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4. Chloride-based Silicon Carbide CVD
Abstract : Silicon carbide (SiC) is a promising material for high power and high frequency devices due to its wide bandgap, high break down field and high thermal conductivity. The most established technique for growth ofepitaxial layers of SiC is chemical vapor deposition (CVD) at around 1550 °C using silane, SiH4, and lighthydrocarbons e g propane, C3H8, or ethylene, C2H4, as precursors heavily diluted in hydrogen. READ MORE
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5. Advances in SiC growth using chloride-based CVD
Abstract : Silicon Carbide (SiC) is a wide band-gap semiconductor. Similar to silicon it can be used to make electronic devices which can be employed in several applications. SiC has some unique features, such as wide band-gap, high hardness, chemical inertness, and capability to withstand high temperatures. READ MORE