Search for dissertations about: "silicide"
Showing result 1 - 5 of 46 swedish dissertations containing the word silicide.
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1. Applications of Ion Beam Methods in Silicide/Si and Silicide/GaAs Nanometre Structures
Abstract : Ion beam methods are used to analyse material (Ion Beam Analysis, IBA) and to modify the target (Ion Beam Modification of Materials, IBMM). In this thesis, ion beams have been used in various IBA techniques to investigate the surface nanometre structures, and also in an ion beam synthesis (IBS) technique to form thin films and to modify material properties. READ MORE
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2. Integration of silicide nanowires as Schottky barrier source/drain in FinFETs
Abstract : The steady and aggressive downscaling of the physical dimensions of the conventional metal-oxide-semiconductor field-effect-transistor (MOSFET) has been the main driving force for the IC industry and information technology over the past decades. As the device dimensions approach the fundamental limits, novel double/trigate device architecture such as FinFET is needed to guarantee the ultimate downscaling. READ MORE
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3. Synthesis and In Situ ToF-LEIS Analysis of Ultrathin Silicides and Ti-based Films
Abstract : Thin films and coatings play a significant role in today’s society, with applications in electronics, optics, mechanics, and biomedicine. Further advancement in the field of surface coatings requires a good understanding of the unique features of ultrathin films and surfaces, which can only be reached with analysis techniques capable of resolving composition and morphology on a sub-nm scale. READ MORE
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4. Thermally stable electrical contacts to 6H silicon carbide
Abstract : Silicon Carbide (SiC) are at present being developed for use in high temperature (≥ 500◦C) and high-power environments under which conventional semiconductors can hardly perform. Thermally stable electrical contacts are essential to the ability of SiC to function under such extreme conditions. READ MORE
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5. Fabrication, characterization, and modeling of metallic source/drain MOSFETs
Abstract : As scaling of CMOS technology continues, the control of parasitic source/drain (S/D) resistance (RSD) is becoming increasingly challenging. In order to control RSD, metallic source/drain MOSFETs have attracted significant attention, due to their low resistivity, abrupt junction and low temperature processing (≤700 °C). READ MORE