Search for dissertations about: "silicides"

Showing result 16 - 20 of 24 swedish dissertations containing the word silicides.

  2. 16. Integration of metallic source/drain contacts in MOSFET technology

    Author : Jun Luo; Mikael Östling; Shi-Li Zhang; Anthony O'Neill; KTH; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; CMOS technology; MOSFET; Schottky barrier MOSFET; metallic source drain; contact resistivity; NiSi; PtSi; SALICIDE; ultrathin silicide; FinFET; Semiconductor physics; Halvledarfysik;

    Abstract : The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. READ MORE

  4. 17. High-Resolution Studies of Silicide-films for Nano IC-Components

    Author : Tobias Jarmar; Fredric Ericson; Ulf Smith; Terje Finstad; Uppsala universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Materials science; thin films; titaniumsilicide; nickel-germanosilicide; ternary phase diagram; textured germanosilicide; high resolution materials analysis; Materialvetenskap; Materials science; Teknisk materialvetenskap;

    Abstract : The function of titanium- and nickel-silicides is to lower the series resistance and contact resistivity in gate, source and drain contacts of an integrated circuit transistor. With decreasing dimensions, the low resistivity C54 TiSi2 is not formed and stays in its high resistivity phase C49. READ MORE

  5. 18. Process integration issues for high-performance bipolar technology

    Author : Tord E. Karlin; KTH; []
    Keywords : ;

    Abstract : The work in this thesis has been focused on processintegration issues for high-performance bipolar technologyincluding experimental work on self-aligned silicides,ion-implanted andin situdoped polysilicon emitters, strained silicongermanium for heterojunction bipolar transistors and physicalprocess and device simulation.Key issues for the self-aligned silicidation of small devicefeatures such as the influence of dopants, silicon morphologyand line width on titanium disilicide formation, phasetransformation and temperature stability, have been addressed. READ MORE

  6. 19. Preparation, characterization and properties of nitrogen rich glasses in alkaline earth-Si-O-N systems

    Author : Ali Sharafat; Saeid Esmaeilzadeh; Stuart Hampshire; Stockholms universitet; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; Oxynitride glasses; glass forming region; nitrogen content; hardness; refractive index; Inorganic chemistry; Oorganisk kemi; oorganisk kemi; Inorganic Chemistry;

    Abstract : Nitrogen rich glasses in the systems Ca-Si-O-N, Sr-Si-O-N and AE-Ca-Si-O-N (AE = Mg, Sr and Ba) have been prepared using a novel glass-synthesis route. The limits of the glass forming regions in the Ca and Sr systems and substitution limits in the AE-Ca-Si-O-N systems have been determined and physical properties of the glasses measured. READ MORE

  7. 20. Modeling and characterization of novel MOS devices

    Author : Stefan Persson; KTH; []
    Keywords : MOSFET; SiGe; high-k dielectric; metal gate; mobility; charge sheet model; retrograde channel structure; intrinsic charge; intrinsic capacitance; contact resistivity;

    Abstract : Challenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examined. READ MORE