Search for dissertations about: "silicon metal"

Showing result 1 - 5 of 224 swedish dissertations containing the words silicon metal.

  2. 1. Silicon nanowire based devices for More than Moore Applications

    Author : Ganesh Jayakumar; Per-Erik Hellström; Mikael Östling; Luca Selmi; KTH; []
    Keywords : silicon nanowire; biosensor; CMOS; sequential integration; lab-on-chip; LOC; high-K; high-K integration on SiNW biosensor; ALD; fluid gate; back gate; SiNW; SiNW pixel matrix; FEOL; pattern transfer lithography; sidewall transfer lithography; STL; multi-target bio detection; BEOL; nanonets; silicon nanonets; SiNN-FET; SiNW-FET; CMOS integration of nanowires; CMOS integration of nanonets; monolithic 3D integration of nanowires; above-IC integration of nanowires; DNA detection using SiNW; SiNW biosensor; dry environment DNA detection; DNA hybridization detection using SiNW; SiNW functionalization; SiNW silanization; SiNW grafting; FEOL integration of SiNW; BEOL integration of SiNW; sequential multiplexed biodetection; biodetection efficiency of SiNW; front end of line integration of SiNW; back end of line integration of SiNW; SiNW dry environment functionalization; APTES cross-linker; accessing SiNW test site; fluorescence microscopy of SiNW; geometry of SiNW; SiNW biosensor variability; top-down fabrication of SiNW; bottom-up fabrication of SiNW; VLS method; ams foundry CMOS process; adding functionality in BEOL process; sensor integration in BEOL process; hafnium oxide; HfO2; aluminium oxide; Al2O3; TiN backgate; Nickel source drain; ISFET; ion sensitive field effect transistor; Overcoming Nernst limit of detection using SiNW; SiNW sub-threshold region operation; ASIC; SOC; SiGe selective epitaxy; epitaxial growth of SiNW; epitaxial growth of nanowires; epitaxial growth of nanonets; nickel silicide contacts; salicide process; high yield SiNW fabrication; high volume SiNW fabrication; silicon ribbon; SiRi pixel; SiRi biosensor; SiRi DNA detection; monolithic 3D integration of nanonets; above-IC integration of nanonets; impact of back gate voltage on silicon nanowire; impact of back gate voltage on SiNW; FDSOI; fully depleted silicon on insulator technology; metal backgate; wafer scale integration of SiNW; wafer scale integration of nanonets; impact of backgate voltage on CMOS inverter circuit; frequency divider; D flip-flop; Informations- och kommunikationsteknik; Information and Communication Technology;

    Abstract : Silicon nanowires (SiNW) are in the spotlight for a few years in the research community as a good candidate for biosensing applications. This is attributed to their small dimensions in nanometer scale that offers high sensitivity, label-free detection and at the same time utilizing small amount of sample. READ MORE

  4. 2. Surface Science Studies of Metal Oxides Formed by Chemical Vapour Deposition on Silicon

    Author : Patrik Karlsson; Anders Sandell; Håkan Rensmo; Marcus Bäumer; Uppsala universitet; []
    Keywords : Physics; chemical vapour deposition; high-k; metal oxides; silicon; dye-solid interface; metal organic; electron spectroscopy; scanning tunnelling microscopy; Fysik;

    Abstract : For an electronic device well-designed interfaces are critical for the performance. Studies of interfaces down to an atomic level are thus highly motivated both from a fundamental and technological point of view. READ MORE

  5. 3. Electronic Properties of Metal Oxide Films Studied by Core Level Spectroscopy

    Author : Jan Hinnerk Richter; Anders Sandell; Håkan Rensmo; Anne Borg; Uppsala universitet; []
    Keywords : Physics; electron spectroscopy; metal oxide; chemical vapour deposition; ion insertion; metal organic; band alignment; zirconium; titanium; silicon; high k; Fysik;

    Abstract : In this dissertation core level electron spectroscopy has been employed to study various aspects of metal oxide films grown under ultra-high vacuum conditions. Studies on in situ ion insertion of lithium into thin TiO2 systems were performed. READ MORE

  6. 4. Electronic Structure of Transition Metal Complexes in Silicon

    Author : Per Tidlund; Fasta tillståndets fysik; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; uniaxial stress; FTIR; Zeeman spectroscopy; deep levels; phonon-assisted Fano resonances; Physics; Fysik; Au; Fysicumarkivet A:1998:Tidlund; PtLi; AuLi; Pt; Transition Metals; Silicon;

    Abstract : This thesis consists of experimental studies of the electronic of electronic structure of the transition metals Au and Pt, and the transition metal complexes, FeIn, PtLi, and AuLi in silicon. Fourier transform infrared spectroscopy, photoconductivity, uniaxial stress- and Zeeman spectroscopy are employed. READ MORE

  7. 5. Ultrathin Oxides in Metal-Oxide-Silicon Structures: Defects and Characterization

    Author : Lars-Åke Ragnarsson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; PMA; interface state densities; silicon; aluminum oxide; Pb; ultrathin; RPECVD; MOS;

    Abstract : The properties of metal-oxide-silicon (MOS) structures with ultrathin oxide layers (15-30 Å) have been investigated by means of electrical characterization. The characterization methods used were mainly capacitance voltage (C-V), current voltage (I-V) and constant voltage stress (I-t) measurements. READ MORE