Search for dissertations about: "silicon on insulator SOI"

Showing result 21 - 25 of 39 swedish dissertations containing the words silicon on insulator SOI.

2. 21. Integration of graphene into MEMS and NEMS for sensing applications

   Author : Xuge Fan; Frank Niklaus; Peter Steeneken; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Micro-electromechanical systems MEMS ; Nano-electromechanical systems NEMS ; heterogeneous 3D integration; Graphene; single-layer graphene; double-layer graphene; bilayer graphene; chemical vapor deposition CVD ; suspended graphene beams; suspended graphene membranes; doubly clamped; fully clamped; silicon on insulator SOI ; vapor hydrofluoric acid VHF ; Young’s modulus; built-in stress; built-in tension; piezoresistivity; gauge factor; accelerometer; resonators; electromechanical sensing; advanced transducers; humidity; gas sensing; sensitivity; CO2 sensing; graphene grain boundary; line defects; optical microscopy; wire bonding; Electrical Engineering; Elektro- och systemteknik;

   Abstract : This thesis presents a novel approach to integrate chemical vapor deposition (CVD) graphene into silicon micro- and nanoelectromechanical systems (MEMS/NEMS) to fabricate different graphene based MEMS/NEMS structures and explore mechanical properties of graphene as well as their applications such as acceleration sensing, humidity sensing and CO2 sensing. The thesis also presents a novel method of characterization of CVD graphene grain boundary based defects. READ MORE

4. 22. Silicon Nanowires for Biomolecule Detection

   Author : Niklas Elfström; Jan Linnros; Mark Reed; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Material physics with surface physics; Materialfysik med ytfysik;

   Abstract : Starting from silicon on insulator (SOI) material, with a top silicon layer thickness of 100 nm, silicon nanowires were fabricated in a top down approach using electron beam (e-beam) lithography and subsequent eactive ion etching (RIE) and oxidation. Nanowires as narrow as 30 nm could be achieved. READ MORE

5. 23. Electro-Acoustic and Electronic Applications Utilizing Thin Film Aluminium Nitride

   Author : David Michael Martin; J. Olsson; I. Katardjiev; S. Gevorgian; Uppsala universitet; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AlN; FBAR; FPAR; CMP; SOI; Nickel Silicide; Wafer Bonding; Electronics; Elektronik; Elektronik; Electronics;

   Abstract : In recent years there has been a huge increase in the growth of communication systems such as mobile phones, wireless local area networks (WLAN), satellite navigation and various other forms of wireless data communication that have made analogue frequency control a key issue. The increase in frequency spectrum crowding and the increase of frequency into microwave region, along with the need for minimisation and capacity improvement, has shown the need for the development of high performance, miniature, on-chip filters operating in the low to medium GHz frequency range. READ MORE

6. 24. Low-frequency noise characterization, evaluation and modeling of advanced Si- and SiGe-based CMOS transistors

   Author : Martin von Haartman; Mikael Östling; Cor Claeys; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; MOSFET; SOI; SiGe; strain; high-k; metal gate; 1 f noise; low-frequency noise; mobility fluctuations; phonons; number fluctuations; traps; buried channel; mobility; substrate bias; Electronics; Elektronik;

   Abstract : A wide variety of novel complementary-metal-oxide-semiconductor (CMOS) devices that are strong contenders for future high-speed and low-noise RF circuits have been evaluated by means of static electrical measurements and low-frequency noise characterizations in this thesis. These novel field-effect transistors (FETs) include (i) compressively strained SiGe channel pMOSFETs, (ii) tensile strained Si nMOSFETs, (iii) MOSFETs with high-k gate dielectrics, (iv) metal gate and (v) silicon-on-insulator (SOI) devices. READ MORE

7. 25. Process Design Kit and High-Temperature Digital ASICs in Silicon Carbide

   Author : Muhammad Shakir; Carl-Mikael Zetterling; B. Gunnar Malm; Philip Mawby; KTH; []
   Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Silicon Carbide; high-temperature digital integrated circuits; process design kit PDK ; bipolar logic gates; transistor-transistor logic TTL ; TTL CPU; bipolar transistor; LSI Circuits; ASICs; Informations- och kommunikationsteknik; Information and Communication Technology;

   Abstract : Electronics such as microprocessors are highly demanded to monitor or control a process or operation in temperature critical (300 ºC to 600 °C) applications. State-of-the-art silicon-based integrated circuits (ICs) have been improved significantly throughout the years but mainly for a low-temperature ambient. READ MORE