Search for dissertations about: "silicon-on.insulator SOI"

Showing result 6 - 10 of 39 swedish dissertations containing the words silicon-on.insulator SOI.

  1. 6. Properties of buried silicon dioxide layers

    Author : Per Ericsson; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; BESOI; charge tripping; radiation damage; silicon on insulator; separation by imlanted oxygen; bond and etchback SOI; SIMOX; thermal stress; SOI; charge injection;

    Abstract : .... READ MORE

  2. 7. Wafer Bonding - Problems and Possibilities

    Author : Mats Bergh; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SOI; atomic force microscope; micromechanics; compliant substrates; wafer bonding; semi-insulating silicon; AFM; surface chemistry; diamond; silicon on insulator; aluminium nitride; microelectronics; surface roughness;

    Abstract : The wafer bonding technology offers a unique opportunity to combine different materials. This has been used for the realisation of novel silicon on insulator (SOI) structures. By replacing the buried silicon dioxide layer with a polycrystalline diamond film the thermal properties of the SOI structure are improved. READ MORE

  3. 8. The influence of surface microroughness on wafer bonding

    Author : Mats Bergh; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; AFM; hydrophilic; surface roughness; diamond; silicon-on-insulator; poly silicon; silicon-on-diamons; atomic force microscope; wafer bonding; SOI; aluminum nitride; hydrophobic;

    Abstract : .... READ MORE

  4. 9. Device design and process integration for SiGeC and Si/SOI bipolar transistors

    Author : Erik Haralson; KTH; []
    Keywords : Silicon-Germanium SiGe ; SiGeC; heterojunction bipolar transistor HBT ; nickel silicide; selectively implanted collector SIC ; device simulation; SiGeC layer staiblity; high resolution x-ray diffraction HRXRD ; silicon-on.insulator SOI ; self-heating;

    Abstract : SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. READ MORE

  5. 10. Silicon micromachined waveguide components for terahertz systems

    Author : Bernhard Beuerle; Joachim Oberhammer; Umer Shah; Kamal Sarabandi; KTH; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; micromachining; waveguide; terahertz; deep reactive ion etching; silicon on insulator; on-wafer characterization; InP; SiGe; Electrical Engineering; Elektro- och systemteknik;

    Abstract : This thesis presents silicon micromachined waveguide components for sub-terahertz and terahertz (THz) systems fabricated by deep reactive ion etching (DRIE). Historically the main driving force for the development of THz systems has been space-based scientific instruments for astrophysics, planetary and Earth science missions. READ MORE