Search for dissertations about: "sims gan"

Found 4 swedish dissertations containing the words sims gan.

  2. 1. Growth and characterization of SiC and GaN

    Author : Rafal Ciechonski; Erik Janzén; Sebastian Lourdudoss; Linköpings universitet; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; SiC; GaN; Deep level transient spectroscopy; Minority Carrier Transient Spectroscopy; Hall effect; Cathodoluminescence; Scanning electron microscopy; Atomic Force microscopy; sublimation growth; MOCVD; heterostructures; High Electron Mobility transistor; point defects; Material physics with surface physics; Materialfysik med ytfysik;

    Abstract : At present, focus of the SiC crystal growth development is on improving the crystalline quality without polytype inclusions, micropipes and the occurrence of extended defects. The purity of the grown material, as well as intentional doping must be well controlled and the processes understood. READ MORE

  4. 2. Silicon δ-doping and Isoelectronic Doping in GaAs ans GaN Layers Grown by MBE

    Author : Jan Thordson; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; MBE; doping; GaN; III-V; delta-doping; heterostructures; GaAs;

    Abstract : This work concerns MBE-grown material, particularly physical effects due to controlled impurities of Si and N in arsenides, and the growth of nitrides and studies of Al- and As-impurities in them. Apart from interesting physical phenomena there are important device applications. The first part is devoted to studies of Si .delta. READ MORE

  5. 3. GaN, AlGaN, GaNAs and Related Heterostructures Grown by Molecular Beam Epitaxy

    Author : Hyonju Kim; Chalmers tekniska högskola; []
    Keywords : NATURVETENSKAP; NATURAL SCIENCES; surface segregation; GaNAs; plasma-assisted MBE; stacking fault; AlGaN GaN; heterointerface; unintentional impurities; III-nitrides;

    Abstract : This work deals with growth and characterization of III-nitrides and related heterostructures as well as GaNAs alloys grown by plasma assisted molecular beam epitaxy (MBE). The III-nitrides belong to the wide bandgap semiconductors due to their large energy bandgap spanning from 1.9 to 6.2 eV. READ MORE

  6. 4. Doping of high-Al-content AlGaN grown by MOCVD

    Author : Daniel Nilsson; Anelia Kakanakova- Georgieva; Erik Janzén; Michelle Moram; Linköpings universitet; []
    Keywords : ;

    Abstract : The high-Al-content AlxGa1-xN, x > 0.70, is the principal wide-band-gap alloy system to enable the development of light-emitting diodes operating at the short wavelengths in the deep-ultraviolet, λ < 280 nm. READ MORE