Search for dissertations about: "single operational amplifier"

Found 3 swedish dissertations containing the words single operational amplifier.

  2. 1. Continuous-Time Delta-Sigma Modulators for Ultra-Low-Power Radios

    Author : Dejan Radjen; Institutionen för elektro- och informationsteknik; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; Delta-Sigma; continuous-time; analog-to-digital; ultra-low-power; clock jitter; single operational amplifier; SAR quantizer;

    Abstract : The modern small devices of today require cheap low power radio frequency (RF) transceivers that can provide reliable connectivity at all times. In an RF transceiver, the analog-to-digital converter (ADC) is one of the most important parts and it is also one of the main power consumers. READ MORE

  4. 2. Efficient and Wideband Load Modulated Power Amplifiers for Wireless Communication

    Author : Han Zhou; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; GaN; energy efficiency; load modulation; Combiner synthesis; RF; wideband; Doherty; power amplifier; CLMA; SCLMA; microwave;

    Abstract : The increasing demand for mobile data traffic has resulted in new challenges and requirements for the development of the wireless communication infrastructure. With the transition to higher frequencies and multi-antenna systems, radio frequency (RF) hardware performance, especially the power amplifier (PA), becomes increasingly important. READ MORE

  5. 3. GaN HEMT Low Noise Amplifiers for Radio Base Station Receivers

    Author : Pirooz Chehrenegar; Chalmers tekniska högskola; []
    Keywords : TEKNIK OCH TEKNOLOGIER; ENGINEERING AND TECHNOLOGY; gallium nitride GaN ; radio base station receiver; cascode; high linearity; robustness.; cascade; high electron mobility transistor HEMT ; low noise; low noise amplifier;

    Abstract : Gallium nitride (GaN) high electron mobility transistor (HEMT) has been introduced as the technology of choice for high power microwave applications due to its material properties including high saturation electron velocity and breakdown field together with excellent thermal conductivity and robustness.It is also a promising candidate for receiver front-ends in the radio base station(RBS) where low noise figure and high linearity are key issues for low noiseamplifier (LNA) design. READ MORE