Search for dissertations about: "stray inductance"
Showing result 1 - 5 of 6 swedish dissertations containing the words stray inductance.
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1. Run-Up Transient Analysis for Salient Pole Wound Field Synchronous Motors : Field winding and power electronics implications for a smoother and cooler asynchronous start
Abstract : Salient Pole Wound Field Synchronous Machines have better efficiency at full load than asynchronous machines of the same capability. Moreover, where asynchronous machines need inherently to draw a magnetizing current from the grid, Salient Pole Wound Field Synchronous Machines can work efficiently at unity power factor. READ MORE
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2. Voltage Transients in the Field Winding of Salient Pole Wound Synchronous Machines : Implications from fast switching power electronics
Abstract : Wound Field Synchronous Generators provide more than 95% of the electricity need worldwide. Their primacy in electricity production is due to ease of voltage regulation, performed by simply adjusting the direct current intensity in their rotor winding. READ MORE
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3. Studies on Current Commutation in Hybrid DC-breakers
Abstract : Compared to conventional AC-circuit breakers, a DC-breaker has to act fast and force the current down to zero. Many different DC-breaker topologies are available, and this thesis is focused on the hybrid DC-breaker comprising a mechanical switch and high power semiconductors. READ MORE
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4. High Efficiency Inductive Power Transfer Systems for Vehicle Charging
Abstract : Awareness of climate change due to greenhouse gas emissions and air pollution has led to a transition from internal combustion engine vehicles to electric vehicles. Wireless charging by inductive power transfer is a promising solution for charging electric vehicles. READ MORE
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5. On Gate Drivers for MOS-Controlled Power Devices and dv-dt Filters for Train Traction Converters
Abstract : In this thesis, low-loss gate-drive solutions and a proposed dv/dt-filter have been investigated with focus on train traction converters with dv/dt constraints.By using the silicon carbide (SiC) junction field-effect transistor (JFET), the switching losses can be significantly reduced compared to the commonly used insulated-gate bipolar transistor (IGBT), but complex gate-driver solutions are required for high utilization in terms of loss reduction. READ MORE